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US 2010/0059744 A1Published application
Transistor, inverter including the same and methods of manufacturing transistor and inverter
AssigneeSamsung Electronics Co., Ltd.
InventorsHuaxiang YIN, Ihun SONG, Sunil KIM, Youngsoo PARK
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Abstract
A transistor, an inverter including the transistor, and methods of manufacturing the inverter and the transistor. A gate insulating layer of the transistor has a charge trap region. A threshold voltage may be moved in a positive (+) direction by trapping charges in the charge trap region. The transistor may be an enhancement mode oxide thin-film transistor (TFT) and may be used as an element of the inverter.
Claims19
A transistor comprising:
- a gate electrode and a channel layer separated from each other;
- a gate insulating layer between the gate electrode and the channel layer including a charge trap region;
- and
- a source electrode and a drain electrode in contact with respective ends of the channel layer,
- wherein a threshold voltage of the transistor increases as charges are trapped in the charge trap region.
2 more elements
Dependencies are inferred from the claim text.