Phase change memory device and method for manufacturing the same

A method for manufacturing a phase change memory device, comprising the steps of:

• forming a first insulation layer having first holes in a cell region of a silicon substrate which has the cell region and a peripheral region;
• sequentially forming a gate insulation layer and a first conductive layer in the peripheral region of the silicon substrate to have substantially the same height as the first insulation layer;
• forming cell switching elements in the first holes in the cell region;
• sequentially forming a second conductive layer and a hard mask layer on the first insulation layer including the cell switching elements and on the first conductive layer;
• forming a gate in the peripheral region by etching the hard mask layer, the second conductive layer, the first conductive layer and the gate insulation layer;
• forming heaters, which comprise the second conductive layer, on the cell switching elements by etching the hard mask layer and the second conductive layer in the cell region;
• forming a second insulation layer on the first insulation layer and on the silicon substrate in the peripheral region to expose the hard mask layer on the heaters and the hard mask layer of the gate;
• forming a third insulation layer on the second insulation layer;
• defining second holes by etching the third insulation layer and the hard mask layer on the heaters to expose the heaters, and forming a barrier layer on sidewalls of the second holes and the second insulation layer;
• and
• forming stack patterns of a phase change layer and a top electrode on the third insulation layer including the second holes.