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US 2010/0059265 A1Published application
Contact of semiconductor device and manufacturing method thereof
OwnerMyung-Soo Kiminventor
Life of this patent
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Abstract
A contact of semiconductor device and manufacturing method thereof prevent generation or inlet of noise through a contact plug which connects wires in different layers. The contact includes a lower wire, an insulating layer covering the lower wire, a contact plug connected to the lower wire through the insulating layer, a conductive tube encircling the contact plug and having the insulating layer in between, and an upper wire connected to the contact plug.
Claims20
An apparatus comprising:
- a lower wire formed over a semiconductor substrate;
- an insulating layer covering the lower wire;
- a contact plug connected to the lower wire through the insulating layer;
- a conductive tube encircling at least a portion of the contact plug, the insulating layer extending in between the conductive tube and the contact plug;
- and
- an upper wire formed over the insulating layer and connected to the contact plug.
3 more elements
A method comprising:
- forming a lower wire over a semiconductor substrate;
- forming a middle insulating layer to cover the lower wire;
- forming a photosensitive pattern over the middle insulating layer;
- etching a portion of the middle insulating layer exposed by the photosensitive pattern to form a contact hole and a tube hole, the tube hole formed around an outer circumferential edge of the contact hole;
- filling the contact hole and the tube hole with metal to form a contact plug and conductive tube;
- forming an upper insulating layer over the contact plug and the conductive tube;
- and
- forming an upper wire over the upper insulating layer, the upper wire connected to the contact plug.
5 more elements
Dependencies are inferred from the claim text.