Semiconductor device including a pressure sensor
AssigneeInfineon Technologies AG
InventorsThoralf Kautzsch, Boris Binder, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.
Claims25
A semiconductor device comprising:
- a first cavity within a semiconductor substrate;
- a second cavity within the semiconductor substrate, the second cavity open to an atmosphere and defining a first lamella between the first cavity and the second cavity;
- and
- a first sense element configured for sensing a pressure on the first lamella.
An integrated pressure sensor comprising:
- a first enclosed trench within a semiconductor substrate;
- a second open trench within the semiconductor substrate, the second trench positioned to define a longitudinal lamella between the first trench and the second trench;
- and
- a sense element configured for sensing a pressure on the lamella.
A method for fabricating a semiconductor device, the method comprising:
- etching a first opening into a substrate;
- etching a second opening into the substrate to define a lamella between the first opening and the second opening;
- fabricating a sense element for sensing a pressure on the lamella;
- closing the first opening and the second opening;
- and
- exposing the second opening to an atmosphere.
A method for fabricating an integrated pressure sensor, the method comprising:
- etching a first trench to a first depth into a first side of a substrate;
- etching a second trench to a second depth greater than the first depth into the first side of the substrate to define a first longitudinal lamella between the first trench and the second trench;
- fabricating a first sense element for sensing a pressure on the first lamella;
- depositing a semiconductor material or a dielectric material over the first trench and the second trench on the first side of the substrate to provide a first sealed cavity and a second sealed cavity;
- and
- thinning a second side of the substrate to open the second sealed cavity to atmosphere.
Dependencies are inferred from the claim text.