Phase change memory and recording material for phase change memory

A recording material for a phase change solid memory, the recording material comprising:

• a uniform-mixed phase that includes:
• at least one of a Te-containing alkali metal iodide phase and a Te-containing silver iodide phase;
• and
• an Sb—Te alloy phase,
• wherein the recording material has a crystal structure that includes a first pair of a tellurium atom and either an alkali metal atom or a silver atom, and a second pair of other tellurium atom and an iodide atom,
• the recording material shows a transition between first and second states,
• the transition between the first and second states is made by at least one of first and second displacement set,
• the first displacement set includes a first displacement of the tellurium atom belonging to the first pair and a second displacement of either the alkali metal atom or the silver atom belonging to the first pair, the directions of the first and second displacements are generally anti-parallel to each other,
• the second displacement set includes a third displacement of the other tellurium atom belonging to the second pair and a fourth displacement of the iodide atom belonging to the second pair, the directions of the third and fourth displacements are generally anti-parallel to each other.

A phase change solid memory comprising a recording material, the recording material comprising:

• a uniform-mixed phase that includes:
• at least one of a Te-containing alkali metal iodide phase and a Te-containing silver iodide phase;
• and
• an Sb—Te alloy phase,
• wherein the recording material shows at least one of a phase change and a phase separation which changes at least one of optical property and electrical property of the recording material.