Circuits, processes, devices and systems for full integration of rf front end module including rf power amplifier

An electronic circuit comprising

• a transistor-based RF (radio frequency) power amplifier having balanced outputs and sharing transistors with a transistor-based receiver RF amplifier having balanced inputs identical with said balanced outputs of said RF power amplifier respectively;
• and
• a balun having a primary and a secondary, said primary having primary connections and a supply connection of said primary intermediate said primary connections and said primary connections ohmically connected to said balanced outputs of said RF power amplifier respectively thereby to couple RF between the balun and the shared transistors of said RF power amplifier and said receiver RF amplifier.

A process of operating an electronic circuit, the process comprising splitting and coupling supply current along balanced lines to balanced outputs of an RF power amplifier and balanced inputs of a receiver RF amplifier, and alternately either transmittingly RF power amplifying or receivingly RF transconducting switchlessly on the balanced lines.

A process of electronic manufacturing comprising integrating on a single semiconductor integrated circuit chip a transistor-based RF (radio frequency) power amplifier having balanced outputs, a transistor-based receiver RF amplifier having balanced inputs ohmically connected to the balanced outputs respectively of said RF power amplifier, and a balun having a primary and a secondary, said primary having primary connections and a supply connection of said primary intermediate said primary connections and said primary connections ohmically connected switchlessly both to said balanced outputs of said RF power amplifier respectively and to said balanced inputs of said receiver RF amplifier.