A method of providing internal resistance in an impedance calibration circuit for impedance matching between a semiconductor memory device and an external device, the method comprising:
- laying out a plurality of internal resistances for impedance matching in the impedance calibration circuit;
- forming at least one of the plurality of internal resistances such that a metal line has an electrical passage extending between a first end and a second end;
- forming one or more cuttable metal options such that each of the metal options provides an electrical connection shorter than the electrical passage extending from the first end to the second end of the metal line;
- varying the resistance value of the internal resistance formed with the metal line by selectively cutting one or more of the one or more cuttable metal options.