Warm-White Light-Emitting Diode and Its Phosphor Powder
AssigneesWei Hung Lo, Shui Sin Jiang, Jin Cheng Lin
InventorsSoshchin Naum, Wei-Hung Lo, Chi-Ruei Tsai
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AssigneesWei Hung Lo, Shui Sin Jiang, Jin Cheng Lin
InventorsSoshchin Naum, Wei-Hung Lo, Chi-Ruei Tsai
Estimating the term…
The present invention discloses a warm-white-light emitting diode has the substrate of indium gallium nitride (InGaN) heterojunction containing a large amount of quantum wells and having a light conversion polymer layer, characterized by that the light conversion polymer layer is uniform in concentration, the light-emitting surface and edges of the indium gallium nitride heterojunction are covered with a thermosetting polymer, and the light conversion polymer layer contains some fluorescent powders, which are formed as at least two particle layers in the light conversion polymer layer to ensure the light transmitted reaching 20% of the first-order blue light and 70-80% of the second-order orange-yellow light from the indium gallium nitride heterojunction. The present invention also discloses a fluorescent powder.
A warm-white-light emitting diode has the substrate of indium gallium nitride (InGaN) heterojunction containing a large amount of quantum wells and having a light conversion polymer layer, characterized by that the light conversion polymer layer is uniform in concentration, the light-emitting surface and edges of the indium gallium nitride heterojunction are covered with a thermosetting polymer, and the light conversion polymer layer contains some fluorescent powders, which are formed as at least two particle layers in the light conversion polymer layer to ensure the light transmitted reaching a first specific percentage of the first-order blue light and a second specific percentage of the second-order orange-yellow light from the indium gallium nitride heterojunction.
The fluorescent powder used in a warm-white light-emitting diode (LED) has the substrate of garnet cubic crystal structure with at least an Ce+3 and Pr+3 exciting agent and is based on yttrium-gadolinium garnet containing ions of B+3, F−1, and N−3 with its stoichiometric formula as (Gd1-x-y-zYxCeyDyz)3Al5-pBpO12-q(F,N)q.
Dependencies are inferred from the claim text.