Low contact resistance semiconductor devices and methods for fabricating the same
AssigneeAdvanced Micro Devices, Inc.
InventorsPaul R. BESSER, Andreas H. KNORR
Life of this patent
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Abstract
Low contact resistance semiconductor devices and methods for fabricating such semiconductor devices are provided. In accordance with one exemplary embodiment, a method comprises depositing an insulating material overlying a metal silicide region and etching a contact opening within the insulating material and exposing the metal silicide region. The contact opening is at least partially bottom-filled with substantially pure cobalt. A conductor is deposited in the contact opening if, after the step of at least partially bottom-filling, the contact opening is not filled with the substantially pure cobalt.
Claims20
A method for fabricating a semiconductor device, the method comprising the steps of:
- depositing an insulating material overlying a metal silicide region;
- etching a contact opening within the insulating material and exposing the metal silicide region;
- at least partially bottom-filling the contact opening with substantially pure cobalt;
- and
- depositing a conductor in the contact opening if, after the step of at least partially bottom-filling, the contact opening is not filled with the substantially pure cobalt.
A method for fabricating an MOS device, the method comprising the steps of:
- forming a gate electrode overlying a surface of a silicon substrate;
- forming impurity-doped source and drain regions at the surface of the silicon substrate in alignment with the gate electrode;
- forming metal silicide regions overlying the impurity-doped source and drain regions;
- depositing an insulating material overlying the gate electrode and the metal silicide regions;
- etching contact openings within the insulating material and exposing the metal silicide regions;
- depositing substantially pure cobalt to partially fill the contact openings;
- and
- depositing a conductor in the contact openings overlying the substantially pure cobalt.
A semiconductor device comprising:
- an impurity-doped region disposed at a surface of a semiconductor substrate;
- a metal silicide disposed on the impurity-doped region;
- an insulating material overlying the impurity-doped region and having a contact opening exposing the metal silicide;
- and
- a substantially pure cobalt portion, wherein the substantially pure cobalt portion at least partially bottom fills the contact opening.
Dependencies are inferred from the claim text.