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US 2009/0289367 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeRenesas Technology Corp.
InventorsDaisuke KODAMA, Shoichi Fukui, Hiroshi Miyazaki, Tatsunori Murata
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Abstract
A copper interconnection layer is formed in an interconnection trench at a surface of an interlayer insulating film. A diffusion preventing insulating film is formed to cover the copper interconnection layer and is made of at least one of SiC and SiCN. An insulating film is formed on the copper interconnection layer with the diffusion preventing insulating film interposed and is made of SiN.
Claims8
A semiconductor device comprising:
- an interlayer insulating film;
- an interconnection layer including copper formed in said interlayer insulating film;
- a diffusion preventing insulating film made of at least one of silicon carbide and silicon carbide nitride formed to cover said interconnection layer including copper;
- and
- an insulating film made of silicon nitride formed on said interconnection layer including copper with said diffusion preventing insulating film interposed.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an interlayer insulating film having a trench at a surface thereof;
- forming an interconnection layer including copper in said trench of said interlayer insulating film;
- forming a diffusion preventing insulating film made of at least one of silicon carbide and silicon carbide nitride to cover said interconnection layer including copper;
- and
- forming an insulating film made of silicon nitride on said interconnection layer including copper with said diffusion preventing insulating film interposed.
2 more elements
Dependencies are inferred from the claim text.