Semiconductor device and manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTadayoshi WATANABE, Yumi HAYASHI, Takamasa USUI
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Abstract
In one aspect of the present invention, a semiconductor device may include an inter-wiring dielectric film in which a wiring trench is formed, a metal wiring layer formed in the wiring trench in the inter-wiring dielectric film, a first barrier layer formed on a side surface of the wiring trench, the first barrier layer being an oxide film made from a metal different from a main constituent metal element in the wiring layer, a second barrier layer formed on a side surface of the wiring layer, the second barrier layer having a Si atom of the metal used in the wiring layer, and a gap formed between the first barrier layer and the second barrier layer.
Claims13
A semiconductor device, comprising:
- an inter-wiring dielectric film in which a wiring trench is formed;
- a metal wiring layer formed in the wiring trench in the inter-wiring dielectric film;
- a first barrier layer formed on a side surface of the wiring trench, the first barrier layer being an oxide film made from a metal different from a main constituent metal element in the wiring layer;
- a second barrier layer formed on a side surface of the wiring layer, the second barrier layer having a Si atom and a metal element in the wiring layer;
- and
- a gap formed between the first barrier layer and the second barrier layer.
A semiconductor device, comprising:
- an inter-wiring dielectric film in which a wiring trench is formed;
- a metal wiring layer formed in the wiring trench in the inter-wiring dielectric film;
- a water-resistant barrier layer formed on a side surface of the wiring layer and an upper surface of the wiring layer;
- and
- a gap formed between the water-resistant barrier layer and a side surface of the wiring trench.
A method of manufacturing a semiconductor device, comprising:
- forming an inter-wiring dielectric film having a wiring trench;
- forming a precursor having a metal M2 on the wiring trench in the inter-wiring dielectric film;
- forming a wiring layer having a metal M1 on the precursor in the wiring trench of the inter-wiring dielectric film, the metal M1 being different from the metal M2;
- forming a first barrier layer which is an oxide film made from the metal M2 on the side surface of the wiring trench, and an oxide film made from the metal M1 at an interface between the wiring layer and the first barrier layer;
- removing the oxide film made from the metal M1, and thereby forming gap between the wiring layer and the first barrier layer;
- and
- forming a second barrier layer on a side surface of the wiring layer that are exposed by forming the gap.
Dependencies are inferred from the claim text.