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US 2009/0289364 A1Published application
Semiconductor device and a method for manufacturing the same
AssigneeRohm Co., Ltd.
InventorTatsuya SAKAMOTO
Life of this patent
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Abstract
A semiconductor device according to the present invention includes: a semiconductor chip; a sealing resin layer formed on the semiconductor chip; and a post electrode formed in a through-hole penetrating through the sealing resin layer in a thickness direction, and having a hemispheric top surface.
Claims20
A semiconductor device comprising:
- a semiconductor chip;
- a sealing resin layer formed on the semiconductor chip;
- and
- a post electrode formed in a through-hole penetrating through the sealing resin layer in a thickness direction, and having a hemispheric top surface.
1 more element
A method for manufacturing a semiconductor device comprising:
- a step for forming a post electrode having a structure which comprises a base portion made of a first metal material and a top edge portion made of a second metal material whose melting point is lower than a melting point of the first metal material on the semiconductor chip ;
- a step for forming a sealing resin layer formed on the semiconductor chip so as to bury the post electrode;
- a step for grinding the sealing resin layer so as to expose the surface of the top edge portion;
- a step for melting the top edge portion by a heat treatment after the step for grinding the sealing resin layer;
- and
- a step for solidifying the top edge portion after the heat treatment.
3 more elements
A semiconductor device, comprising:
- a semiconductor chip;
- a sealing layer formed on the semiconductor chip;
- and
- a connecting electrode formed in a through-hole penetrating through the sealing resin layer in a thickness direction, and having a curving face at a top edge thereof.
1 more element
Dependencies are inferred from the claim text.