Semiconductor Device and Semiconductor Device Manufacturing Method

A method of producing a semiconductor device including a semiconductor chip and a support board which supports the semiconductor chip, the method comprising the steps of:

• forming a one-side metal layer in a region located across a predetermined section line on one surface of an insulative substrate;
• forming an other-side metal layer on the other surface of the substrate opposite from the one surface in a position opposed to the one-side metal layer perpendicularly to the one surface;
• forming a continuous through-hole extending continuously through the other-side metal layer and the substrate in a position located across the section line;
• forming a metal plating layer on a surface of the other-side metal layer, an inner surface of the continuous through-hole and a portion of the one-side metal layer exposed to the continuous through-hole by plating;
• after the plating step, removing a portion of the other-side metal layer and a portion of the metal plating layer which are present on the section line on the other surface of the substrate;
• and
• after the metal removing step, cutting the resulting substrate along the section line into separate support boards by moving the substrate and a cutting tool relative to each other to cause the cutting tool to cut into the substrate from the one surface to the other surface of the substrate.

A method of producing a semiconductor device including a semiconductor chip and a support board which supports the semiconductor chip, the method comprising the steps of:

• forming a one-side metal layer in a region located across a predetermined section line on one surface of an insulative substrate;
• forming an other-side metal layer on the other surface of the substrate opposite from the one surface in a position opposed to the one-side metal layer perpendicularly to the one surface;
• forming continuous through-holes each extending continuously through the other-side metal layer and the substrate in two positions located symmetrically with respect to the section line;
• forming a metal plating layer on a surface of the other-side metal layer, inner surfaces of the continuous through-holes and portions of the one-side metal layer exposed to the continuous through-holes by plating;
• after the plating step, forming a recess in a region located between the two continuous through-holes and having a width not smaller than a width of the other-side metal layer as measured along the section line, the recess being dented from the other surface toward the one surface of the substrate and communicating with the two continuous through-holes;
• and
• after the recess forming step, cutting the resulting substrate along the section line into separate support boards by moving the substrate and a cutting tool relative to each other to cause the cutting tool to cut into the substrate from the one surface to the other surface of the substrate.

A semiconductor device comprising:

• a semiconductor chip;
• a support board which supports the semiconductor chip on one surface thereof;
• an internal terminal provided on the one surface of the support board and electrically connected to the semiconductor chip;
• an external terminal provided on the other surface of the support board opposite from the one surface and extending inward from an edge of the support board;
• and
• an interconnection extending through the support board from the one surface to the other surface of the support board and connecting the internal terminal and the external terminal, wherein
• the external terminal unitarily includes a thinner portion disposed along the edge of the support board and having a relatively small thickness, and a thicker portion disposed inward of the thinner portion and having a relatively great thickness.

A method of producing a semiconductor device including a semiconductor chip and a support board which supports the semiconductor chip, the method comprising the steps of:

• forming a one-side metal layer in a region located across a predetermined section line on one surface of an insulative substrate;
• forming an other-side metal layer on the other surface of the substrate opposite from the one surface in a position opposed to the one-side metal layer perpendicularly to the one surface;
• forming a continuous through-hole extending continuously through the other-side metal layer and the substrate in a position located across the section line;
• forming a first metal plating layer on a surface of the other-side metal layer, an inner surface of the continuous through-hole and a portion of the one-side metal layer exposed to the continuous through-hole by a first plating process;
• forming a second metal plating layer on a surface of the first metal plating layer except for a region extending along the section line and having a predetermined width across the section line by a second plating process;
• and
• after the second plating step, cutting the resulting substrate along the section line into separate support boards by moving the substrate and a cutting tool relative to each other to cause the cutting tool to cut into the substrate from the one surface to the other surface of the substrate.

A method of producing a semiconductor device including a semiconductor chip and a support board which supports the semiconductor chip, the method comprising the steps of:

• forming a one-side metal layer in a region located across a predetermined section line on one surface of an insulative substrate;
• forming an other-side metal layer on the other surface of the substrate opposite from the one surface in a position opposed to the one-side metal layer perpendicularly to the one surface;
• forming a continuous through-hole extending continuously through the other-side metal layer and the substrate in a position located across the section line;
• forming a first metal plating layer on a surface of the other-side metal layer, an inner surface of the continuous through-hole and a portion of the one-side metal layer exposed to the continuous through-hole by a first plating process;
• after the first plating step, forming an insulative resin layer of an insulative resin across the section line on the other surface of the resulting substrate so as to cover a portion of the first metal plating layer on the other-side metal layer across an entire width of the first metal plating layer defined along the section line;
• forming a second metal plating layer on a surface of the first metal plating layer by a second plating process;
• and
• after the second plating step, cutting the resulting substrate along the section line into separate support boards by moving the substrate and a cutting tool relative to each other to cause the cutting tool to cut into the substrate from the one surface to the other surface of the substrate.