Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first insulator and a second insulator provided so as to face each other;
• a semiconductor integrated circuit and a first antenna provided over the semiconductor integrated circuit sealed by the first insulator and the second insulator;
• a conductive material covering an outer surface of the first insulator and an outer surface of the second insulator;
• and
• a second antenna electromagnetically connected to the first antenna.

A semiconductor device comprising:

• a first insulator and a second insulator provided so as to face each other wherein the first insulator has a first surface facing the second insulator and a second surface facing in an opposite direction from the first surface and wherein the second insulator has a third surface facing to the first insulator and a fourth surface facing an opposite direction from the third surface;
• a semiconductor integrated circuit between the first insulator and the second insulator;
• an antenna between the semiconductor integrated circuit and the first insulator;
• a first conductive layer in contact with the second surface of the first insulator;
• and
• a second conductive layer in contact with the fourth surface of the second insulator,
• wherein at least of one of the first conductive layer and the second conductive layer is in contact with a side surface of the first insulator and a side surface of the second insulator, and
• wherein the side surface of the first insulator is coplanar with the side surface of the second insulator.

A semiconductor device comprising:

• a first insulator and a second insulator provided so as to face each other wherein the first insulator has a first surface facing the second insulator and a second surface facing in an opposite direction from the first surface and wherein the second insulator has a third surface facing the first insulator and a fourth surface facing an opposite direction from the third surface;
• a semiconductor integrated circuit between the first insulator and the second insulator;
• a first antenna between the semiconductor integrated circuit and the first insulator;
• a first conductive layer in contact with the second surface of the first insulator;
• a second conductive layer in contact with the fourth surface of the second insulator;
• and
• a second antenna electromagnetically connected to the first antenna,
• wherein at least of one of the first conductive layer and the second conductive layer is in contact with a side surface of the first insulator and a side surface of the second insulator, and
• wherein the side surface of the first insulator is coplanar with the side surface of the second insulator.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor integrated circuit over a substrate with a separation layer interposed therebetween;
• forming an antenna over the semiconductor integrated circuit;
• bonding a first insulator to the semiconductor integrated circuit with the antenna interposed therebetween;
• separating the semiconductor integrated circuit and the antenna from the substrate;
• bonding the semiconductor integrated circuit and the antenna to a second insulator;
• cutting off the first insulator and the second insulator so as to seal the semiconductor integrated circuit and the antenna;
• forming a first conductive layer in contact with the first insulator;
• and
• forming a second conductive layer in contact with the second insulator,
• wherein an outer surface of the first insulator and an outer surface of the second insulator are covered with the first conductive layer and the second conductive layer.