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US 2009/0289330 A1Published application
Group iii nitride semiconductor substrate, substrate for group iii nitride semiconductor device, and methods of making same
AssigneeHitachi Cable, Ltd.
InventorMasatomo SHIBATA
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Abstract
A III group nitride semiconductor substrate according to the present invention is fabricated by forming a metal film or metal nitride film 2′ with mesh structure in which micro voids are provided on a starting substrate 1, and growing a III group nitride semiconductor crystal layer 3 via the metal film or metal nitride film 2′.
Claims8
A method for fabricating a III group nitride semiconductor substrate, comprising the steps of:
- forming a metal film on a starting substrate;
- conducting a heat treatment for the starting substrate on which the metal film is formed to form innumerable micro voids which extend from a surface of the metal film to a surface of the starting substrate in the metal film;
- and
- growing a III group nitride semiconductor crystal via the metal film on the heat treated starting substrate,
- wherein the surface of the starting substrate (a forming surface of the metal film) is a nonpolar forming surface for providing a growth surface of the III group nitride semiconductor crystal as a nonpolar surface, and the growth surface of the III group nitride semiconductor crystal is the nonpolar surface.
2 more elements
A method for fabricating a III group nitride semiconductor substrate, comprising the steps of:
- forming a metal film on a starting substrate;
- conducting a heat treatment for the starting substrate on which the metal film is formed in an atmosphere of gas containing a nitrogen element at a temperature of 800° C. or more to form a metal nitride film by nitriding the metal film and to form innumerable micro voids which extend from a surface of the metal nitride film to a surface of the starting substrate in the metal nitride film;
- and
- growing a III group nitride semiconductor crystal via the metal nitride film on the heat treated starting substrate,
- wherein the surface of the starting substrate (a forming surface of the metal nitride film) is a nonpolar forming surface for providing a growth surface of the III group nitride semiconductor crystal as a nonpolar surface, and the growth surface of the III group nitride semiconductor crystal is the nonpolar surface.
2 more elements
A III group nitride semiconductor substrate comprising:
- a III group nitride semiconductor crystal formed on a starting substrate via a metal film with mesh structure in which micro voids are provided,
- wherein a surface of the starting substrate (a forming surface of the metal film) is a nonpolar forming surface for providing a surface of the III group nitride semiconductor crystal as a nonpolar surface, and the surface of the III group nitride semiconductor crystal is the nonpolar surface.
A III group nitride semiconductor substrate comprising:
- a III group nitride semiconductor crystal formed on a starting substrate via a metal nitride film with mesh structure in which micro voids are provided,
- wherein a surface of the starting substrate (a forming surface of the metal nitride film) is a nonpolar forming surface for providing a surface of the III group nitride semiconductor crystal as a nonpolar surface, and the surface of the III group nitride semiconductor crystal is the nonpolar surface.
Dependencies are inferred from the claim text.