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US 2009/0289328 A1Published application
Insulation film for capacitor element, capacitor element and semiconductor device
AssigneeElpida Memory, Inc.
InventorMasami Tanioku
Life of this patent
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Abstract
An insulation film includes niobium, oxygen and a metal element, and the insulation film has a band gap width of larger than 4.2 eV, and at least a portion of the insulation film includes an amorphous structure.
Claims18
An insulation film comprising niobium, oxygen and a metal element, and at least a portion of the insulation film including an amorphous structure.
A capacitor element comprising a pair of electrodes and an insulation film interposed between the pair of electrodes,
- wherein the insulation film comprises niobium, oxygen and a metal element, and at least a portion of the insulation film includes an amorphous structure.
A semiconductor device comprising a capacitor element including a pair of electrodes and insulation film interposed between the pair of electrodes,
- wherein the insulation film comprises niobium, oxygen and a metal element and at least a portion of the insulation film includes an amorphous structure.
Dependencies are inferred from the claim text.