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US 2009/0289327 A1Published application
Capacitor insulating film and method for forming the same, and capacitor and semiconductor device
AssigneeElpida Memory, Inc.
InventorNaonori Fujiwara
Life of this patent
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Abstract
A capacitor insulating film includes a laminated structure in which aluminum oxide films and titanium dioxide films are alternately laminated, wherein the titanium dioxide films each have a rutile crystal structure, and the ratio of the total thickness of the aluminum oxide films to the total thickness of the laminated structure ranges from 3 to 8%.
Claims13
A capacitor insulating film comprising:
- a laminated structure in which aluminum oxide films and titanium dioxide films are alternately laminated,
- wherein the titanium dioxide films each have a rutile crystal structure, and
- a ratio of the total thickness of the aluminum oxide films to the total thickness of the laminated structure ranges from 3 to 8%.
A capacitor comprising:
- a first electrode;
- a second electrode;
- and
- an insulating film sandwiched between the first and second electrodes,
- wherein the insulating film includes a laminated structure in which aluminum oxide films and titanium dioxide films are alternately laminated;
- the titanium dioxide films each have a rutile crystal structure;
- and
- a ratio of the total thickness of the aluminum oxide films to the total thickness of the laminated structure ranges from 3 to 8%.
5 more elements
A method for forming a capacitor insulating film, comprising:
- forming a film having a laminated structure in which aluminum oxide films and titanium dioxide films are alternately laminated;
- and
- carrying out a heat treatment to form a rutile crystal structure in each of the titanium dioxide films,
- wherein a ratio of the total thickness of the aluminum oxide films to the total thickness of the film having the laminated structure ranges from 3 to 8%.
1 more element
Dependencies are inferred from the claim text.