Apparatus For Implementing Multiple Integrated Circuits Using Different Gate Oxide Thicknesses On A Single Integrated Circuit Die
AssigneeQUALCOMM Incorporated
InventorRonald John Tessitore
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Abstract
An apparatus comprising plurality of functional integrated circuit blocks, each manufactured with different oxide thicknesses on a monolithic integrated circuit die, is described. Using different gate oxide thicknesses for different functional integrated circuit blocks provides reduced power consumption and increases performance in processing systems. Several embodiments comprising different combinations of functional integrated circuit blocks, including processor cores and memory elements, are presented.
Claims12
A monolithic integrated circuit die, comprising:
- a. a first functional integrated circuit block manufactured solely with a first gate oxide thickness which advantageously uses the characteristics of the first gate oxide thickness in its function;
- b. a second functional integrated circuit block manufactured solely with a second gate oxide thickness which advantageously uses the characteristics of the second gate oxide thickness in its function;
- and
- c. an I/O integrated circuit block manufactured with an I/O gate oxide thickness coupled to the first functional integrated circuit block and the second functional integrated circuit block.
An apparatus having multiple functional integrated circuit blocks having different gate oxide thicknesses for functional devices on a monolithic integrated circuit die, comprising:
- a. a plurality of functional integrated circuit blocks, each of the plurality of functional integrated circuit blocks manufactured using one of a plurality of functional gate oxide thicknesses;
- and
- b. a control circuit block which is capable of switching tasks between the plurality of functional integrated circuit blocks.
Dependencies are inferred from the claim text.