Optical semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsEitaro ISHIMURA, Masaharu Nakaji, Eiji Yagyu
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Abstract
An optical semiconductor device comprises a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially formed on a semiconductor substrate; wherein said Bragg reflection layer of the first conductivity type has first semiconductor layers having a band gap wavelength larger than the wavelength of incident light, and second semiconductor layers having a band gap wavelength smaller than the wavelength of incident light; and an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers.
Claims8
An optical semiconductor device comprising a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially formed on a semiconductor substrate;
- wherein
- said Bragg reflection layer of the first conductivity type has first semiconductor layers having a band gap wavelength larger than the wavelength of incident light, and second semiconductor layers having a band gap wavelength smaller than the wavelength of incident light;
- and
- an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers.
An optical semiconductor device comprising a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a distributed Bragg reflector layer of a second conductivity type, sequentially formed on a semiconductor substrate;
- wherein
- said distributed Bragg reflector layer of the first conductivity type and said distributed Bragg reflector layer of the second conductivity type have first semiconductor layers having a band gap wavelength larger than the wavelength of incident light, and second semiconductor layers having a band gap wavelength smaller than the wavelength of incident light;
- and
- an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers.
An optical semiconductor device comprising a distributed Bragg reflector layer of a first conductivity type, an active layer, and a distributed Bragg reflector layer of a second conductivity type, sequentially formed on a semiconductor substrate;
- wherein
- said Bragg reflection layer of the first conductivity type and said distributed Bragg reflector layer of the second conductivity type have first semiconductor layers having a band gap wavelength larger than a wavelength of outgoing light, and second semiconductor layers having the band gap wavelength smaller than the wavelength of outgoing light;
- and
- an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers.
Dependencies are inferred from the claim text.