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US 2009/0289310 A1Published application
Semiconductor device and semiconductor device manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorsTakayuki Hiraoka, Toshikazu Fukuda
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Abstract
A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an internal circuit and an input/output buffer are arranged in the silicon-germanium formation region, and a pad electrode and an electrostatic protection element are arranged in the silicon-germanium non-formation region.
Claims20
A semiconductor device comprising:
- a silicon substrate;
- a first silicon germanium layer formed on the silicon substrate;
- a second silicon germanium layer formed on the silicon substrate, and having higher concentration of germanium than that in the first silicon germanium layer;
- a first semiconductor element formed by using the first silicon germanium layer;
- and
- a second semiconductor element formed by using the second silicon germanium layer, wherein
- the second semiconductor element has larger driving force than that of the first semiconductor element.
4 more elements
A semiconductor device comprising:
- a silicon substrate;
- a silicon germanium layer formed in a part of a region on the silicon substrate;
- a first semiconductor element formed on the silicon substrate without using the silicon germanium layer;
- and
- a second semiconductor element formed on the silicon substrate by using the silicon germanium layer, wherein
- the second semiconductor element has larger driving force than that of the first semiconductor element.
3 more elements
A semiconductor device manufacturing method comprising:
- selectively forming on a silicon substrate a blocking layer that blocks an epitaxial growth of a silicon germanium layer on the silicon substrate;
- selectively epitaxially growing the silicon germanium layer on the silicon substrate using the blocking layer as a mask;
- removing the blocking layer from the silicon substrate after the selectively epitaxially growing the silicon germanium layer on the silicon substrate;
- forming a first semiconductor element on the silicon substrate by using the silicon germanium layer that is selectively epitaxially grown;
- and
- forming a second semiconductor element on the silicon substrate without using the silicon germanium layer that is selectively epitaxially grown.
3 more elements
Dependencies are inferred from the claim text.