Semiconductor device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorEiji MORIFUJI
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Abstract
A semiconductor device 1 comprises: a semiconductor substrate 100; first semiconductor element regions formed on the semiconductor substrate 100 in which first semiconductor elements of first conductivity type are to be formed; second semiconductor element regions formed on the semiconductor substrate 100 in which second semiconductor elements of second conductivity type are to be formed; and element separation regions 120 for separating the first semiconductor element regions and the second semiconductor element regions, wherein the first semiconductor element regions are formed at the locations higher than those of the element separation regions 120 neighboring to the first semiconductor element regions.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- first semiconductor element regions on the semiconductor substrate configured to comprise first semiconductor elements of first conductivity type;
- second semiconductor element regions on the semiconductor substrate configured to comprise second semiconductor elements of second conductivity;
- and
- element separation regions between the first semiconductor element regions and the second semiconductor element regions, wherein the first semiconductor element regions are at the locations higher than those of the element separation regions next to the first semiconductor element regions.
A semiconductor device, comprising:
- a semiconductor substrate;
- driver transistor regions on the semiconductor substrate configured to comprise first semiconductor elements of first conductivity type;
- load transistor regions on the semiconductor substrate configured to comprise second semiconductor elements of second conductivity type;
- and
- element separation regions between the driver transistor regions and the load transistor regions, wherein the driver transistor regions are at the locations higher than those of the load transistor regions.
A method of fabricating a semiconductor device, comprising:
- preparing a semiconductor substrate;
- forming first semiconductor element regions configured to comprise first semiconductor elements of first conductivity type, and second semiconductor element regions configured to comprise second semiconductor elements of second conductivity type are to be formed, on the semiconductor substrate;
- and
- forming the element separation regions between the first semiconductor element regions and the second semiconductor element regions, in order to form the first semiconductor element regions at the locations higher than those of the element separation regions next to the first semiconductor element regions.
Dependencies are inferred from the claim text.