Laser annealing of metal oxide semiconductoron temperature sensitive substrate formations

A method of annealing a metal oxide on a temperature sensitive substrate formation comprising the steps of:

• providing a temperature sensitive substrate formation, the temperature sensitive substrate formation being formed of material that is substantially undamaged by temperatures below approximately 150° C.;
• forming a spacer layer on a surface of the temperature sensitive substrate formation, the spacer layer including materials that can withstand temperatures in a range of 300° C. to 800° C.;
• forming a metal oxide semiconductor device on the spacer layer, the device including at least a layer of metal oxide semiconductor material, an interface of the metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of metal oxide semiconductor material and the interface;
• and
• at least partially annealing the layer of metal oxide semiconductor material by heating the gate metal layer with pulses of infra red or visible light radiation to a temperature in a range of 300° C. to 800° C.

A metal oxide semiconductor device on a temperature sensitive substrate formation comprising:

• a temperature sensitive substrate formation, the temperature sensitive substrate formation being formed of material that is substantially undamaged by temperatures below approximately 150° C.;
• a spacer layer positioned on a surface of the temperature sensitive substrate formation, the spacer layer including materials that can withstand temperatures in a range of 300° C. to 800° C.;
• and
• a metal oxide semiconductor device positioned on the spacer layer, the device including at least a layer of metal oxide semiconductor material, an interface of the metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of metal oxide semiconductor material and the interface, the layer of metal oxide semiconductor material and the interface being at least partially annealed.