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US 2009/0289286 A1Published application
CMOS Image Sensor Having improved signal eficiency and method for manufacturing the same
OwnerBum Sik Kiminventor
Life of this patent
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Abstract
A CMOS image sensor and a method for manufacturing the same improves signal efficiency by reducing a dark signal, and includes a substrate having a first conductive type comprising an image area and a circuit area, a STI isolation layer in the substrate for electrical isolation within the circuit area, and a field oxide in the substrate for electrical isolation within the image area.
Claims9
1-18. (canceled)
A CMOS image sensor comprising:
- a substrate having a first conductive type and comprising an image area and a circuit area;
- a LOCOS field oxide in the substrate for electrical isolation within the image area;
- a channel stop ion area below the LOCOS field oxide;
- and
- a gate electrode on the circuit area of the substrate, the gate electrode having a gate oxide on the circuit area and a polysilicon gate on the gate oxide, the gate oxide being formed in such a way that both sides of the gate oxide and the polysilicon gate overlap with the LOCOS field oxide.
2 more elements
A CMOS image sensor comprising:
- a substrate having a first conductive type and comprising an image area and a circuit area;
- a LOCOS field oxide in the substrate for electrical isolation within the image area;
- a channel stop ion area directly below the LOCOS field oxide, in the substrate;
- and
- a gate electrode on the circuit area of the substrate, the gate electrode having a gate oxide on the circuit area and a polysilicon gate on the gate oxide, the gate oxide being formed in such a way that both sides of the gate oxide and the polysilicon gate overlap with the LOCOS field oxide.
2 more elements
Dependencies are inferred from the claim text.