# US 2009/0276751 A1 · Method of performing mask-writer tuning and optimization

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2009/0276751 A1
- Document ID: US20090276751A1
- Status: Published application
- Kind: A1
- Application number: 12/417,559
- Filed: 2009-04-02
- Published: 2009-11-05
- Earliest claimed: 2008-04-14
- Assignees: ASML Netherlands B.V.
- Inventors: Yu Cao; James Norman Wiley; Jun Ye
- Web page: https://patentgrep.com/patent/US20090276751A1

## CPC

- G03F 1/78: by charged particle beam [CPB], e.g. electron beam patterning of masks
- G03F 1/44: Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
- G03F 1/68: Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F 1/76: Patterning of masks by imaging
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A model-based tuning method for tuning a first mask writer unit utilizing a reference mask writer unit, each of which has tunable parameters for controlling mask writing performance. The method includes the steps of defining a test pattern and a mask writing model; generating the test pattern utilizing the reference mask writer unit and measuring the mask writing results; generating the test pattern utilizing the first mask writer unit and measuring the mask writing results; calibrating the mask writing model utilizing the mask writing results corresponding to the reference mask writer unit, where the calibrated mask writing model has a first set of parameter values; tuning the calibrated mask writing model utilizing the mask writing results corresponding to the first mask writer unit, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first mask writer unit based on a difference between the first set of parameter values and the second set of parameter values.

## Claims

### Claim 1

A method of tuning a first mask writer unit utilizing a reference mask writer unit, said first mask writer unit and said reference mask writer unit each having tunable parameters for controlling mask writing performance, said method comprising the steps of:
defining a test pattern and a mask writing model;
generating said test pattern utilizing said reference mask writer unit and measuring the mask writing results;
generating said test pattern utilizing said first mask writer unit and measuring the mask writing results;
calibrating said mask writing model utilizing said mask writing results corresponding to said reference mask writer unit, said calibrated mask writing model having a first set of parameter values;
tuning said calibrated mask writing model utilizing said mask writing results corresponding to said first mask writer unit, said tuned calibrated mask writing model having a second set of parameter values;
adjusting said parameters of said first mask writer unit based on a difference between said first set of parameter values and said second set of parameter values.

### Claim 2 (depends on 1)

A method of tuning a first mask writer unit according to claim 1, wherein said first mask writer unit comprises at least one of an e-beam writer unit and an optical writer unit.

### Claim 3 (depends on 1)

A method of tuning a first mask writer unit according to claim 1, wherein said mask writing model comprises fixed parameters.

### Claim 4 (depends on 1)

A method of tuning a first mask writer unit according to claim 1, wherein said tunable parameters of said first mask writer unit correspond to said tunable parameters of said reference mask writer unit.

### Claim 5 (depends on 1)

A method of tuning a first mask writer unit according to claim 1, wherein said tunable parameters of said first mask writer unit and said reference mask writer unit are set at a nominal value when generating said test pattern.

### Claim 6

A method of tuning a mask writer unit utilizing a mask writing model, said mask writer unit and said mask writing model each having tunable parameters for controlling mask writing performance, said method comprising the steps of:
defining a test pattern;
generating a test pattern utilizing said mask writer unit and measuring the results, said mask writer unit having a first set of parameter values;
tuning said mask writing model utilizing said results corresponding to said mask writer unit, said tuned mask writing model having a second set of parameter values;
adjusting said first set of parameters of said mask writer unit based on a difference between said first set of parameter values and said second set of parameter values.

### Claim 7 (depends on 6)

A method of tuning a mask writer unit according to claim 6, said mask writer unit comprises at least one of an e-beam writer unit and an optical writer unit.

### Claim 8 (depends on 6)

A method of tuning a mask writer twit according to claim 6, wherein said mask writing model further comprises fixed parameters.

### Claim 9 (depends on 6)

A method of tuning a mask writer unit according to claim 6, wherein said tunable parameters of said mask writer unit correspond to said tunable parameters of said mask writing model.

### Claim 10 (depends on 6)

A method of tuning a lithography system according to claim 6, wherein said tunable parameters of said mask writer unit are set at a nominal value when generating said test pattern.