# US 2009/0267482 A1 · Pressure regulator

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- Number: US 2009/0267482 A1
- Document ID: US20090267482A1
- Status: Published application
- Kind: A1
- Application number: 12/096,555
- Filed: 2006-12-07
- Published: 2009-10-29
- Earliest claimed: 2005-12-08
- Assignees: National Institute for Materials Science
- Inventors: Naoto Hirosaki
- Web page: https://patentgrep.com/patent/US20090267482A1

## CPC

- C09K 11/77348: {Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides}
- C04B 35/597: based on silicon oxynitride, {e.g. SIALONS}
- H01J 29/20: characterised by the luminescent material
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3213: Strontium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3865: Aluminium nitrides
- C04B 2235/3878: Alpha silicon nitrides
- C04B 2235/3895: Non-oxides with a defined oxygen content, e.g. SiOC, TiON
- C04B 2235/442: Carbonates
- C04B 2235/445: Fluoride containing anions, e.g. fluosilicate
- C04B 2235/5409: expressed by specific surface values
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/6562: Heating rate
- H01J 2211/42: Fluorescent layers
- H01J 2329/20: characterised by the luminescent material
- H10H 20/8512: {Wavelength conversion materials}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A blue phosphor, which has excellent durability and high brightness, and in particular a blue phosphor in a powder state, which can realize high-brightness luminescence upon exposure to an electron beam, are provided. The phosphor being characterized by comprising at least europium incorporated as a solid solution into an inorganic crystal having a crystal structure of an AlN crystal or an AlN solid solution crystal, wherein the phosphor emits divalent europium-derived fluorescence having a peak at a wavelength in the range of 430 nm to 500 nm upon exposure to an excitation source, is provided. In this case, it is more preferable that a predetermined metal element and silicon are incorporated therein. And a manufacturing method to manufacture such phosphor is also provided. Further, a lighting device comprising such blue phosphor is provided.

## Claims

### Claim 1

A phosphor comprising: an inorganic crystal having a crystal structure of an AlN crystal or an AlN solid solution crystal; and at least europium incorporated therein as a solid solution, wherein the phosphor emits fluorescence being derived from a divalent europium ion and having a peak at a wavelength in a range of 430 nm to 500 nm upon exposure to an excitation source.

### Claim 2 (depends on 1)

The phosphor according to claim 1 wherein the inorganic crystal having the crystal structure of the AlN crystal or the AlN solid solution crystal comprises: a wurtzite-type AlN crystal structure, a crystal structure selected from 2Hδ; 27R; 21R; 12H; 15R; and 8H, or a crystal structure having an Al(O, N)4 tetrahedron skeleton therein, or a combination thereof.

### Claim 3 (depends on 1)

The phosphor according to claim 1, further comprising: oxygen incorporated therein as a solid solution.

### Claim 4 (depends on 1)

The phosphor according to claim 1, further comprising: a metal element A (here, A is one or two or more kinds of elements selected from Mg, Ca, Sr, Ba, Zn, and Cd) and silicon incorporated therein as a solid solution.

### Claim 5 (depends on 4)

The phosphor according to claim 4 wherein the metal element A is Zn.

### Claim 6 (depends on 4)

The phosphor according to claim 4 wherein the metal element A is Ba.

### Claim 7 (depends on 1)

The phosphor according to claim 1, wherein a composition of the phosphor is given by EuaAbAlcSidOeNf (here, a+b+c+d+e+f=1) and wherein following conditions are satisfied:
0.00001≦a≦0.1 (i),
0.0001≦b≦0.2 (ii),
0.4≦c≦0.55 (iii),
0.005≦d≦0.2 (iv),
0.001≦e≦0.05 (v), and
0.3≦f≦0.55 (vi).

### Claim 8 (depends on 1)

The phosphor according to claim 1, wherein the excitation source is any one of an ultraviolet or visible light having a wavelength of 100 nm to 420 nm, an electron beam, and an X-ray.

### Claim 9

A manufacturing method of a phosphor comprising:
holding a raw material mixture comprising at least: Eu metal, oxide, carbonate, nitride, fluoride, chloride, oxynitride, or a combination thereof; A metal, oxide, carbonate, nitride, fluoride, chloride, oxynitride, or a combination thereof (here, A is one or two or more kinds of elements selected from Mg, Ca, Sr, Ba, Zn, and Cd); silicon nitride; and aluminum nitride, in a bulk density of 40% or less; and
firing the thus-held mixture in a nitrogen atmosphere of 0.1 MPa or higher to 100 MPa or lower in a temperature range of 1500° C. or higher and 2200° C. or lower.

### Claim 10 (depends on 9)

The manufacturing method of the phosphor according to claim 9 wherein a content (atomic %) of silicon atom contained in the raw material mixture is lower than a content (atomic %) of aluminum atom.

### Claim 11 (depends on 1)

A lighting device comprising: an emission source emitting light of wavelength of 330 to 420 nm; and a phosphor, wherein the phosphor comprises a phosphor recited in claim 1.

### Claim 12 (depends on 11)

The lighting device according to claim 11, wherein the emission source comprises a LED or a LD, wherein the phosphor further comprises: a green phosphor having an emission peak at a wavelength of 520 nm to 550 nm by an excitation light of 330 to 420 nm; and a red phosphor having an emission peak at a wavelength of 600 nm to 700 nm by the excitation light of 330 to 420 nm.

### Claim 13 (depends on 11)

The lighting device according to claim 11, wherein the emission source comprises: a LED or a LD, and wherein the phosphor further comprises a yellow phosphor having an emission peak at a wavelength of 550 nm to 600 nm by an excitation light of 330 to 420 nm.

### Claim 14 (depends on 1)

An image display device comprising: an excitation source and a phosphor, wherein the phosphor comprises: a phosphor recited in claim 1.

### Claim 15 (depends on 14)

The image display device according to claim 14, comprising: any one of a fluorescent display tube (VFD), a field emission display (FED or SED), and a cathode-ray tube (CRT), wherein the excitation source is an electron beam whose acceleration voltage is in range of 10 V or higher to 30 kV or lower.