# US 2009/0267221 A1 · Semiconductor device

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- Number: US 2009/0267221 A1
- Document ID: US20090267221A1
- Status: Published application
- Kind: A1
- Application number: 12/428,594
- Filed: 2009-04-23
- Published: 2009-10-29
- Earliest claimed: 2008-04-24
- Assignees: Shinko Electric Industries Co., Ltd.
- Inventors: Tomoharu FUJII
- Web page: https://patentgrep.com/patent/US20090267221A1

## CPC

- H10W 90/401: {characterised by multiple insulating or insulated package substrates, interposers or RDLs}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 70/698: Semiconductor materials that are electrically insulating, e.g. undoped silicon
- H10W 74/01: Manufacture or treatment
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 90/00: Package configurations
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 44/248: {for antennas}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An antenna formed on one surface side of a silicon substrate and a semiconductor element provided on the other surface side of the silicon substrate are electrically connected to each other by means of a through via penetrating the silicon substrate. A wiring board is formed separately from the silicon substrate. A passive element is provided on one surface side of the wiring board. A copper core solder ball is provided between the one surface side of the wiring board and the other surface side of the silicon substrate and electrically connects the silicon substrate and the wiring board to each other.

## Claims

### Claim 1

A semiconductor device comprising;
a silicon substrate;
an antenna formed on one surface side of the silicon substrate;
a semiconductor element to be an active element which is provided on the other surface side of the silicon substrate;
a through via penetrating the silicon substrate and electrically connecting the antenna and the semiconductor element to each other;
a wiring board formed separately from the silicon substrate;
a passive element provided on one surface side of the wiring board; and
a connecting member provided between the one surface side of the wiring board and the other surface side of the silicon substrate and electrically connecting the silicon substrate and the wiring board to each other.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
an insulating layer formed of SiO2 or SiN and provided on an outer peripheral surface including an inner peripheral surface of a through hole in the silicon substrate.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the connecting member is a solder ball in which a solder layer is formed on an outer peripheral surface of a core portion.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the wiring board is formed by a resin.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a sealing resin sealing a portion between the one surface side of the wiring board and the other surface side of the silicon substrate.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein an external connecting terminal is attached to the other surface side of the wiring board.