System and Method of Resistance Based Memory Circuit Parameter Adjustment

A method of determining a set of parameters, the method comprising:

• selecting a first parameter based on a first predetermined design constraint of a spin torque transfer magnetoresistive random access memory (STT-MRAM);
• selecting a second parameter based on a second predetermined design constraint of the STT-MRAM;
• and
• performing an iterative methodology to adjust at least one circuit parameter of a sense amplifier portion of the STT-MRAM by selectively adjusting a physical property of the at least one circuit parameter to achieve a desired sense amplifier margin value but without changing the first parameter or the second parameter.

A processor readable medium having processor instructions that are executable to cause a processor to:

• receive a first input of a first parameter based on a first predetermined design constraint of a resistance based memory circuit;
• receive a second input of a second parameter based on a second predetermined design constraint of the resistance based memory circuit;
• perform an iterative methodology to adjust at least one circuit parameter of a sense amplifier portion of the resistance based memory circuit by selectively adjusting a physical property of the at least one circuit parameter to achieve a desired sense amplifier margin value without changing the first parameter or the second parameter;
• and
• store a value associated with the physical property after the desired sense amplifier margin is achieved given the predetermined first and second design constraints.