Field effect transistor and method of producing same
AssigneeCanon Kabushiki Kaisha
InventorsAkane Masumoto, Daisuke Miura, Tomonari Nakayama
Life of this patent
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Abstract
A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
Claims4
1-4. (canceled)
A method of producing a field effect transistor, which comprises the step of heating a monobicycloporphyrin compound represented by the general formula (2):
- wherein R1, R2 and R4 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester, and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms;
- R3 is a hydrogen atom or an aryl group;
- and M denotes two hydrogen atoms, a metal atom or a metal oxide, to effect conversion to a monobenzoporphyrin compound represented by the general formula (1):
- wherein R1, R2, R3, and M are as above defined.
(canceled)
Dependencies are inferred from the claim text.