Silicon carbide substrate, semiconductor device, wiring substrate, and silicon carbide manufacturing method
AssigneesNational University Corporation Tohoku University, Mitsui Engineering & Shipbuilding Co., Ltd.
InventorsTadahiro Ohmi, Akinobu Teramoto, Sumio Sano, Fusao Fujita
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Abstract
A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.
Claims13
A silicon carbide substrate which has a loss equal to or less than 2 dB/mm at a frequency of 20 GHz
A semiconductor device comprising a substrate that is formed by polycrystalline silicon carbide and that has a loss equal to or less than 2 dB/mm at a frequency of 20 GHz.
A silicon carbide manufacturing method comprising:
- preparing preliminary silicon carbide substrate that has a loss higher than 2 dB/mm at a frequency of 20 GHz;
- and
- subjecting the preliminary silicon carbide substrate to heat treatment to reduce the loss equal to or less than 2 dB/mm.
Dependencies are inferred from the claim text.