# US 2009/0260982 A1 · Wafer processing deposition shielding components > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2009/0260982 A1 - Document ID: US20090260982A1 - Status: Published application - Kind: A1 - Application number: 12/423,444 - Filed: 2009-04-14 - Published: 2009-10-22 - Earliest claimed: 2008-04-16 - Assignees: Applied Materials, Inc. - Inventors: Martin Lee Riker; Keith A. Miller; Anantha Subramani - Web page: https://patentgrep.com/patent/US20090260982A1 ## CPC - C23C 16/4585: {Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds} - C23C 14/34: Sputtering - C23C 14/50: Substrate holders - C23C 14/564: {Means for minimising impurities in the coating chamber such as dust, moisture, residual gases} - H01J 37/32623: {Mechanical discharge control means} - H01J 37/32633: {Baffles} - H01J 37/3408: {Planar magnetron sputtering} - H01J 37/3441: {Dark space shields} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support. ## Claims ### Claim 1 A lower shield for encircling a sputtering target and a substrate support in a substrate processing chamber, comprising: a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising: a top wall that surrounds a sputtering surface of the sputtering target; and a bottom wall that surrounds the substrate support; a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band; a base plate extending radially inward from the bottom wall of the cylindrical band; and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support. ### Claim 2 (depends on 1) The lower shield of claim 1, wherein the top wall comprises: an inner periphery; and an outer periphery, wherein the outer periphery extends to form a sloped step. ### Claim 3 (depends on 2) The lower shield of claim 2, wherein the sloped step is angled radially outward between about 5 degrees and about 10 degrees from vertical. ### Claim 4 (depends on 3) The lower shield of claim 3, wherein the inner periphery is angled radially inward between about 2 degrees and about 5 degrees from vertical. ### Claim 5 (depends on 1) The lower shield of claim 1, wherein the cylindrical inner band, the base plate, and the cylindrical outer band form a U-shaped channel. ### Claim 6 (depends on 5) The lower shield of claim 5, wherein the cylindrical inner band comprises a height that is less than the height of the cylindrical outer band. ### Claim 7 (depends on 6) The shield of claim 6, wherein the height of the cylindrical inner band is about one fifth of the height of the cylindrical outer band. ### Claim 8 (depends on 1) The lower shield of claim 1, wherein the bottom wall has a notch. ### Claim 9 (depends on 1) The lower shield of claim 1, wherein the cylindrical outer band, the top wall, the support ledge, the bottom wall, and the inner cylindrical band comprise a unitary structure. ### Claim 10 (depends on 1) The lower shield of claim 1, wherein exposed surfaces of the lower shield are bead blasted to have a surface roughness of 175±75 microinches. ### Claim 11 (depends on 1) The lower shield of claim 1, further comprising a twin-wire aluminum arc spray coating on a surface of the lower shield wherein the twin-wire aluminum arc spray coating comprise a surface roughness from about 600 to about 2300 microinches. ### Claim 12 A deposition ring for encircling a peripheral wall of a substrate support in a processing chamber, comprising: an annular band for surrounding the peripheral wall of the substrate support, the annular band comprising: an inner lip which extends transversely from the annular band and is substantially parallel to the peripheral wall of the substrate support, wherein the inner lip defines an inner perimeter of the deposition ring which surrounds the periphery of the substrate and substrate support to protect regions of the support that are not covered by the substrate during processing to reduce or even entirely preclude deposition of sputtering deposits on the peripheral wall; and a v-shaped protuberance that extends along a central portion of the band with a first radially inward recess adjacent to the inner lip and a second radially inward recess on either side of the v-shaped protuberance. ### Claim 13 (depends on 12) The deposition ring of claim 12, wherein opposing surfaces of the v-shaped protuberance form an angle between about 25° and about 30°. ### Claim 14 (depends on 12) The deposition ring of claim 12, wherein the first radially inward recess is located in a horizontal plane slightly below a horizontal plane of the second radially inward recess. ### Claim 15 (depends on 14) The deposition ring of claim 14, wherein the first radially inward recess and the second radially inward recess are substantially parallel to a bottom surface of the deposition ring. ### Claim 16 (depends on 12) The deposition ring of claim 12, further comprising a ledge extending outward from the V-shaped protuberance. ### Claim 17 (depends on 12) The deposition ring of claim 12, wherein a bottom surface of the annular band has a notch which extends under the V-shaped protuberance and the inner lip, wherein the notch has a width between about 0.6 inches and about 0.75 inches and a height between about 0.020 inches and 0.030 inches. ### Claim 18 (depends on 12) The deposition ring of claim 12, wherein the second radially inward recess has an outer diameter between about 13 inches and about 13.5 inches and an inner diameter between about 12 inches and about 12.5 inches, wherein an apex of the v-shaped protuberance has a diameter between about 12 inches and about 12.3 inches, and wherein the inner lip has an outer diameter between about 11 inches and about 12 inches. ### Claim 19 A cover ring for encircling and at least partially shadowing a deposition ring from sputtering deposits, comprising: an annular wedge, comprising: a top surface; an inclined top surface sloped radially inward and coupled with the top surface having an inner periphery and an outer periphery; and a bottom surface to rest upon a ledge of a deposition ring, wherein the top surface is substantially parallel to the bottom surface; a projecting brim coupled with the top surface by the inclined top surface, wherein the inclined top surface in cooperation with the projecting brim, block line-of-sight deposition from exiting the interior volume and entering the chamber body cavity; and an inner cylindrical band and an outer cylindrical band extending downward from the annular wedge, the inner cylindrical band having a smaller height than the outer cylindrical band. ### Claim 20 (depends on 19) The cover ring of claim 19, further comprising a sloped step located below the inclined top surface of the annular wedge and coupling the projecting brim with the bottom surface. ### Claim 21 (depends on 20) The cover ring of claim 20, wherein the sloped step extends downwardly from the annular wedge and radially outward from the inner periphery. ### Claim 22 (depends on 21) The cover ring of claim 21, wherein the sloped step is slanted at an angle relative to the bottom surface between about 40 degrees and about 50 degrees. ### Claim 23 (depends on 19) The cover ring of claim 19, wherein the cover ring is fabricated from a material selected from the group comprising stainless steel, titanium, aluminum, aluminum oxide, and combinations thereof. ### Claim 24 (depends on 19) The cover ring of claim 19, wherein a surface of the cover ring is treated with a twin-wire aluminum arc-spray coating. ### Claim 25 (depends on 19) The cover ring of claim 19, wherein the cover ring has an outer diameter between about 14.5 inches and about 15 inches and an inner diameter between about 11.5 inches and about 12.5 inches and wherein the inclined top surface is slanted at an angle relative to the top surface between about 5 degrees and about 15 degrees.