# US 2009/0260762 A1 · Process gas introducing mechanism and plasma processing device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2009/0260762 A1 - Document ID: US20090260762A1 - Status: Published application - Kind: A1 - Application number: 12/457,834 - Filed: 2009-06-23 - Published: 2009-10-22 - Earliest claimed: 2003-05-02 - Assignees: Tokyo Electron Limited - Inventors: Takayuki Kamaishi; Akinori Shimamura; Masato Morishima - Web page: https://patentgrep.com/patent/US20090260762A1 ## CPC - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H01J 37/3244: {Gas supply means} - H10P 72/0421: {for drying etching} - H10P 72/0432: {mainly by conduction} - H10P 72/0441: {Apparatus for sealing, encapsulating, glassing, decapsulating or the like} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path. ## Claims ### Claim 1 A plasma processing apparatus for performing a plasma processing on a substrate to be processed, the apparatus comprising: a chamber accommodating therein the substrate to be processed; a plasma generation unit, having a bell jar and an antenna, for producing a plasma inside the bell jar, wherein the bell jar made of a dielectric material is provided at an upper part of the chamber to communicate therewith and the antenna is coiled around an outer side of the bell jar to generate an induced electric field in the bell jar; a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber; and a mounting table for mounting thereon the substrate to be processed provided in the chamber, wherein, given that an inner diameter of the bell jar is D and an inside measurement of height in a central portion of the bell jar is H, a flatness K defined by a ratio D/H is in the range of 1.60˜9.25, wherein the plasma processing apparatus further comprises a mask, made of a dielectric material, for covering the mounting table, and wherein the mask has a first region where the substrate to be processed is mounted and a second region around the first region, and the first and the second region are configured to have a same height. ### Claim 2 (depends on 1) The plasma processing apparatus of claim 1, wherein, in the second region, there are provided plural projections for positioning the substrate to be processed at a position of the first region. ### Claim 3 (depends on 1) The plasma processing apparatus of claim 1, wherein, in the first region, there are installed a number of pin holes through which elevating pins for elevating the substrate to be processed from the mounting table penetrate; and groove patterns communicating with the pin holes. ### Claim 4 A plasma processing apparatus for performing a plasma processing on a substrate to be processed, the apparatus comprising: a chamber accommodating therein the substrate to be processed; a plasma generation unit, having a bell jar and an antenna, for producing a plasma inside the bell jar, wherein the bell jar made of a dielectric material is provided at an upper part of the chamber to communicate therewith and the antenna is coiled around an outer side of the bell jar to generate an induced electric field in the bell jar; a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber; and a mounting table for mounting thereon the substrate to be processed provided in the chamber, wherein, given that an inner diameter of the bell jar is D and a distance from a ceiling portion of a central portion of the bell jar to the mounting table is H1, a flatness K1 defined by a ratio D/H1 is in the range of 0.90˜3.85, wherein the plasma processing apparatus further comprises a mask, made of a dielectric material, for covering the mounting table, and wherein the mask has a first region where the substrate to be processed is mounted and a second region around the first region, and the first and the second region are configured to have a same height. ### Claim 5 (depends on 4) The plasma processing apparatus of claim 4, wherein, in the second region, there are provided plural projections for positioning the substrate to be processed at a position of the first region. ### Claim 6 (depends on 4) The plasma processing apparatus of claim 4, wherein, in the first region, there are installed a number of pin holes through which elevating pins for elevating the substrate to be processed from the mounting table penetrate; and groove patterns communicating with the pin holes. ### Claim 7 A plasma processing apparatus for performing a plasma processing on a substrate to be processed, the apparatus comprising: a chamber accommodating therein the substrate to be processed; a plasma generation unit, having a bell jar and an antenna, for producing a plasma inside the bell jar, wherein the bell jar made of a dielectric material is provided at an upper part of the chamber to communicate therewith and the antenna is coiled around an outer side of the bell jar to generate an induced electric field in the bell jar; a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber; a mounting table for mounting thereon the substrate to be processed provided in the chamber; and a mask, made of a dielectric material, for covering the mounting table and mounting thereon the substrate to be processed, and wherein the mask has a first region where the substrate to be processed is mounted and a second region around the first region, and the first and the second region are configured to have a same height. ### Claim 8 (depends on 7) The plasma processing apparatus of claim 7, wherein, in the second region, there are provided plural projections for positioning the substrate to be processed at a position of the first region. ### Claim 9 (depends on 7) The plasma processing apparatus of claim 7, wherein, in the first region, there are installed a number of pin holes through which elevating pins for elevating the substrate to be processed from the mounting table penetrate; and groove patterns communicating with the pin holes.