# US 2009/0260759 A1 · Method of improving adhesion of dielectric cap to copper

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- Number: US 2009/0260759 A1
- Document ID: US20090260759A1
- Status: Published application
- Kind: A1
- Application number: 12/082,988
- Filed: 2008-04-16
- Published: 2009-10-22
- Earliest claimed: 2008-04-16
- Assignees: Spansion LLC
- Inventors: King-Sang Lam
- Web page: https://patentgrep.com/patent/US20090260759A1

## CPC

- H10W 20/096: {by contacting with gases, liquids or plasmas}
- H10W 20/075: {of multilayered thin functional dielectric layers}
- H10W 20/097: {by thermally treating}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In a method of promoting adhesion between a copper body and a dielectric layer in contact therewith, the copper body and dielectric layer are placed in a vacuum chamber, in a chamber, the copper body and dielectric layer within the chamber are heated, and SiH4 is provided in the chamber.

## Claims

### Claim 1

A method of promoting adhesion between a copper body and a dielectric layer in contact therewith comprising:
placing the copper body and dielectric layer in a chamber; and
providing SiH4 in the chamber.

### Claim 2 (depends on 1)

The method of claim 1 wherein the dielectric layer is a nitride layer.

### Claim 3 (depends on 1)

The method of claim 1 wherein a vacuum is applied within the chamber.

### Claim 4 (depends on 3)

The method of claim 3 wherein the vacuum applied is 0.1 mTorr to 1 Atm.

### Claim 5 (depends on 2)

The method of claim 2 wherein the copper body and nitride layer are heated in the chamber.

### Claim 6 (depends on 5)

The method of claim 5 wherein the copper body and nitride layer are heated to a temperature within the range of from 200°-600°.

### Claim 7 (depends on 6)

The method of claim 6 wherein the copper body and nitride layer are heated to a temperature within the range of from 200°-600° within the range of from 0.1 seconds to 100 seconds.

### Claim 8

A method of promoting adhesion between a copper body and a silicon nitride layer in contact therewith comprising:
placing the copper body and silicon nitride layer in a chamber;
applying a vacuum within the chamber;
heating the copper body and silicon nitride layer within the chamber; and
providing SiH4 in the chamber.

### Claim 9 (depends on 8)

The method of claim 8 wherein the vacuum applied is 0.1 mTorr below atmospheric pressure, and the copper body and silicon nitride layer are heated to a temperature within the range of from 200°-600° for a period within the range of from 0.1 seconds to 100 seconds.

### Claim 10

A method of promoting adhesion between a copper body and a dielectric layer in contact therewith comprising:
diffusing copper atoms from the copper body into the dielectric layer.

### Claim 11 (depends on 10)

The method of claim 10 wherein the dielectric layer is a nitride layer.

### Claim 12 (depends on 11)

The method of claim 11 wherein the method comprises placing the copper body and nitride layer in a chamber, and providing SiH4 in the chamber.

### Claim 13 (depends on 12)

The method of claim 12 wherein a vacuum is applied within the chamber.

### Claim 14 (depends on 13)

The method of claim 13 wherein the copper body and nitride layer are heated in the chamber.