# US 2009/0260569 A1 · Chemical vapor deposition apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2009/0260569 A1 - Document ID: US20090260569A1 - Status: Published application - Kind: A1 - Application number: 12/257,131 - Filed: 2008-10-23 - Published: 2009-10-22 - Earliest claimed: 2008-04-18 - Assignees: Samsung Electro-Mechanics Co., Ltd. - Inventors: Changsung Sean KIM; Chang Hwan Choi; Jong Pa Hong; Joong El Kim - Web page: https://patentgrep.com/patent/US20090260569A1 ## CPC - C23C 16/45591: {Fixed means, e.g. wings, baffles} - C23C 16/45508: {Radial flow} - C23C 16/45574: {Nozzles for more than one gas} - C23C 16/45582: {Expansion of gas before it reaches the substrate} - C23C 16/45585: {Compression of gas before it reaches the substrate} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas. ## Claims ### Claim 1 A chemical vapor deposition apparatus comprising: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas into the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas. ### Claim 2 (depends on 1) The chemical vapor deposition apparatus of claim 1, further comprising a compartment member defining the reactor, compartmenting the reservoir from the reservoir and introducing the reaction gas stored in the reservoir into the reactor. ### Claim 3 (depends on 2) The chemical vapor deposition apparatus of claim 2, wherein the reservoir is formed such that a center of the reactor is eccentric from a center of the chamber. ### Claim 4 (depends on 1) The chemical vapor deposition apparatus of claim 1, wherein the reservoir comprises: a bigger flow path formed in an area where the reaction gas is introduced; a smaller flow path formed opposite to the bigger flow path to have a relatively smaller width; and a reduction flow path having a width gradually reduced from the bigger flow path toward the smaller flow path. ### Claim 5 (depends on 1) The chemical vapor deposition apparatus of claim 1, wherein the reservoir comprises: a bigger flow path formed in an area where the reaction gas is introduced; a smaller flow path formed opposite to the bigger flow path to have a relatively smaller width; and an expansion flow path having a width gradually expanded from the smaller flow path toward the bigger flow path. ### Claim 6 (depends on 2) The chemical vapor deposition apparatus of claim 2, wherein the compartment member comprises a porous member generating flow resistance of the reaction gas stored in the reservoir and supplied to the reactor. ### Claim 7 (depends on 2) The chemical vapor deposition apparatus of claim 2, the compartment member comprises: a plate having a substantially ring shape and compartmenting the reactor from the reservoir, and a plurality of communication holes formed in the plate to keep the reservoir in communication with the reactor. ### Claim 8 (depends on 2) The chemical vapor deposition apparatus of claim 2, wherein the compartment member comprises: a plate having a substantially ring shape and compartmenting the reactor from the reservoir, and a plurality of slits formed in the plate to keep the reservoir in communication with the reactor. ### Claim 9 (depends on 1) The chemical vapor deposition apparatus of claim 1, further comprising a wall protruded upward from a bottom of the reservoir where the reaction gas is introduced to diffuse the reaction gas. ### Claim 10 (depends on 1) The chemical vapor deposition apparatus of claim 1, further comprising a guiding wall protruded upward from a bottom of the reservoir where the reaction gas is introduced, the guiding wall inclined in a flow direction at a predetermined angle to guide the reaction gas. ### Claim 11 (depends on 1) The chemical vapor deposition apparatus of claim 1, wherein the reservoir comprises a plurality of sub-reservoirs storing gases different in kind from one another. ### Claim 12 (depends on 11) The chemical vapor deposition apparatus of claim 11, further comprising a screen provided in the reservoir to compartment the plurality of sub-reservoirs from one another. ### Claim 13 (depends on 11) The chemical vapor deposition apparatus of claim 11, further comprising a sub-intake part connected to the plurality of sub-reservoirs, respectively to allow the different kinds of gases to be introduced into the sub-reservoir. ### Claim 14 (depends on 13) The chemical vapor deposition apparatus of claim 13, further comprising a guiding part provided in at least one of the sub-reservoirs to guide the gas fed through the sub-intake part. ### Claim 15 (depends on 14) The chemical vapor deposition apparatus of claim 14, wherein at least one of the plurality of sub-intake parts is disposed substantially vertically, the guiding part comprises a curved guiding part formed in a curve to guide the gas fed vertically in a horizontal direction. ### Claim 16 (depends on 14) The chemical vapor deposition apparatus of claim 14, wherein at least one of the plurality of sub-intake parts is disposed substantially vertically, the guiding part comprises an inclined guiding part inclined at a predetermined angle to guide the gas fed vertically in a substantially horizontal direction. ### Claim 17 (depends on 13) The chemical vapor deposition apparatus of claim 13, further comprising a wall provided in at least one of the plurality of sub-reservoirs to diffuse the gas fed through the sub-intake part.