# US 2009/0258166 A1 · Device and method for patterning structures on a substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2009/0258166 A1 - Document ID: US20090258166A1 - Status: Published application - Kind: A1 - Application number: 10/595,434 - Filed: 2004-11-09 - Published: 2009-10-15 - Earliest claimed: 2003-11-12 - Assignees: International Business Machines Corporation - Inventors: Siegfried F. Karg; Roland Germann; Heike E. Riel; Walter Heinrich Riess; Reto Schlittler - Web page: https://patentgrep.com/patent/US20090258166A1 ## CPC - H01J 37/3174: {Particle-beam lithography, e.g. electron beam lithography} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 40/00: Manufacture or treatment of nanostructures - C23C 16/047: {using irradiation by energy or particles} - B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites - H01J 2237/31738: using STM - H01J 2237/31759: using near-field effects, e.g. STM - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapour of a material which is suitable for Chemical Vapour Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapour, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapour. ## Claims ### Claim 1 A device for patterning structures on a substrate, the device comprising: an Atomic Force Microscope having at least one scanning tip; a light emitting device; a space being filled with a vapour of a material suitable for deposition onto said substrate in a Chemical Vapour Deposition process when decomposed; and an electromagnetic field being strong enough around said scanning tip to decompose said vapour around said scanning tip, wherein said light emitting device is to emit a light beam causing said electromagnetic field around said scanning tip, said light beam having an intensity that is not capable to decompose the vapour in areas other than around said scanning tip. ### Claim 2 (depends on 1) A device according to claim 1, wherein said light emitting device is a laser. ### Claim 3 (depends on 1) A device according to claim 1, wherein said scanning tip and said substrate is separated by a distance between 5 nm and 10 nm. ### Claim 4 (depends on 1) A device according claim 1, wherein said light emitting device is adapted to emit said light beam onto said scanning tip in such a way that a polarization of said light beam is parallel to a longitudinal axis of said scanning tip. ### Claim 5 (depends on 1) A device according to claim 1, wherein said scanning tip has a dimension between 5 nm and 20 nm. ### Claim 6 (depends on 1) A device according to claim 1, wherein said Atomic Force Microscope comprises a plurality of substantially parallel scanning tips. ### Claim 7 (depends on 1) A device according to claim 1, wherein the wavelength of said light beam is adapted to match the size of said scanning tip such that a sufficient amplification of said light beam is achieved. ### Claim 8 (depends on 1) A device according to claim 1, wherein one or more of the scanning tips are metalized. ### Claim 9 (depends on 1) A device according to claim 1, wherein said vapour is a gas selected from the group consisting of Halides, Hydrides, Metal Organic Compounds, AuClPF3, W(CO)6, TiCl4, TaCl5, WF6, SiH4, GeH4, AlH3(NMe3)2, NH3, AlMe3, Ti(CH2tBu)4, Ti(OiPr)4, Ti(NMe2)4, Cu(acac)2, and Ni(CO)4. ### Claim 10 A method for patterning structures on a substrate, comprising: providing a substrate underneath a tip of an Atomic Force Microscope; providing a vapour of a material, which is suitable for Chemical Vapour Deposition onto the substrate when decomposed, in a space between the tip and the substrate; and exposing the tip to a light beam emitted by a light emitting device in such a way that the tip intensifies an electromagnetic near-field to such an extend that the vapour is decomposed, wherein an intensity of the light beam is not enough to decompose the vapour. ### Claim 11 (depends on 10) A method according to claim 10, wherein providing said vapour comprises providing a gas selected from the group consisting of Halides, Hydrides, Metal Organic Compounds, AuClPF3, W(CO)6, TiCl4, TaCl5, WF6, SiH4, GeH4, AlH3(NMe3)2, NH3, AlMe3, Ti(CH2tBu)4, Ti(OiPr)4, Ti(NMe2)4, Cu(acac)2, and Ni(CO)4. ### Claim 12 (depends on 10) A method according to claim 10, wherein exposing said tip to said light beam comprises emitting said light beam onto said tip in such a way that a polarization of said light beam is parallel to a longitudinal axis of said tip. ### Claim 13 (depends on 10) A method according to claim 10, further comprising adapting a wavelength of said light beam to match the size of said tip such that a sufficient amplification of said light beam is achieved. ### Claim 14 (depends on 10) A method according to claim 10, further comprising applying a laser to emit said light beam and exposing said tip to said light beam. ### Claim 15 (depends on 10) A method according to claim 10, wherein said Atomic Force Microscope has multiple tips, further comprising providing said substrate underneath said multiple tips. ### Claim 16 (depends on 15) A method according to claim 15, further comprising metalizing one or more of said multiple tips.