Method of programming a flash memory device using self boosting
AssigneeHynix Semiconductor Inc.
InventorMin Kyu LEE
Life of this patent
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Abstract
A method of programming a flash memory device controls a channel boosting level to ensure device properties. The flash memory device is programmed in an Incremental Step Pulse Program (ISPP) manner by applying a program voltage to a selected memory cell and a pass voltage to unselected memory cells. The programming is performed by varying the pass voltage so that a gap of a predetermined range is maintained between a channel voltage and a word line voltage of the unselected memory cell.
Claims17
A method of programming a flash memory device, the method comprising:
- applying a program voltage to a selected memory cell;
- and
- applying a pass voltage to unselected memory cells,
- wherein the pass voltage is varied so that a gap of a predetermined range is maintained between a channel voltage and a word line voltage of the unselected memory cell.
A method of programming a flash memory device, the method comprising:
- programming a selected memory cell by applying a program voltage to the selected memory cell and a pass voltage to unselected memory cells;
- verifying the programmed state of the selected memory cell;
- determining whether the level of the program voltage is higher than a first voltage;
- re-programming the memory cell by increasing the program voltage by a first step voltage when the program voltage is not higher than the first voltage;
- and
- re-programming the memory cell by increasing the program voltage and the pass voltage by the first step voltage and a second step voltage, respectively, when the program voltage is higher than the first voltage.
A method of programming a flash memory device, the method comprising:
- programming a selected memory cell by applying a program voltage to the selected memory cell and a pass voltage to unselected memory cells;
- verifying the programmed state of the selected memory cell;
- determining whether the number of program loop is more than a first number;
- re-programming the memory cell by increasing the program voltage by a first step voltage when the number of the program loop is not more than the first number;
- and
- re-programming the memory cell by increasing the program voltage and the pass voltage by the first step voltage and a second step voltage, respectively, when the number of the program loop is more than the first number.
Dependencies are inferred from the claim text.