Magnetoresistive sensor with sub-layering of pinned layers
AssigneeHGST Netherlands B.V.
InventorsWen-yaung Lee, Daniele Mauri, Alexander M. Zeltser
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AssigneeHGST Netherlands B.V.
InventorsWen-yaung Lee, Daniele Mauri, Alexander M. Zeltser
Estimating the term…
Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.
A magnetic head, comprising:
A method of fabricating a magnetic head that has a magnetoresistive read sensor, comprising:
A hard disk drive, comprising:
Dependencies are inferred from the claim text.