Hall effect device and method
AssigneeInfineon Technologies AG
InventorsUdo Ausserlechner, Mario Motz
Life of this patent
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Abstract
A semiconductor device including a Hall effect sensor and related method. The Hall effect device includes a substrate having a first conductivity type and an epitaxial layer having a second conductivity type defining a Hall effect portion. A conductive buried layer having the second conductivity type is situated between the epitaxial layer and the substrate. First and second output terminals and first and second voltage terminals are provided, with the second voltage terminal being coupled to the conductive buried layer.
Claims25
A semiconductor device, comprising:
- a Hall effect device, including:
- a substrate having a first conductivity type;
- an epitaxial layer having a second conductivity type defining a Hall effect portion;
- a conductive buried layer having the second conductivity type situated between the epitaxial layer and the substrate;
- and
- first, second, third and fourth terminals;
- wherein the second terminal is coupled to the conductive buried layer.
A method of producing a Hall effect device, comprising:
- providing a substrate having a first conductivity type;
- providing an epitaxial layer having a second conductivity type defining a Hall effect portion;
- providing a conductive buried layer having the second conductivity type between the epitaxial layer and the substrate;
- coupling first and second terminals to the conductive buried layer;
- and
- coupling third and fourth terminals to the epitaxial layer.
A magnetic sensing method, comprising:
- providing a first Hall effect device including a Hall effect portion and a conductive buried layer between the Hall effect portion and a substrate;
- coupling a first terminal to the Hall effect portion;
- coupling a second terminal to the conductive buried layer;
- coupling third and fourth output terminals to the Hall effect portion on opposite sides of the first voltage terminal;
- connecting the first and second terminals to first and second respective voltage potentials;
- and
- determining the voltages at the third and fourth terminals in response to a magnetic field.
A magnetic sensing method, comprising:
- providing first and second Hall effect devices, each including a Hall effect portion and a conductive buried layer between the Hall effect portion and a substrate with first and second terminals coupled to the conductive buried layer and third and fourth terminals coupled to the Hall effect portion;
- coupling the third terminal of the first Hall effect device to the fourth terminal of the second Hall effect device;
- coupling the fourth terminal of the first Hall effect device to the third terminal of the second Hall effect device;
- connecting the first terminal of the first Hall effect device to a first voltage potential and the second terminal of the second Hall effect device to a second voltage potential;
- and
- determining the voltages at the third and fourth terminals of the first Hall effect device in response to a magnetic field.
Dependencies are inferred from the claim text.