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US 2009/0256262 A1Published application
Semiconductor devices including porous insulators
AssigneeMicron Technology, Inc.
InventorsWarren M. Farnworth, Tongbi Jiang
Life of this patent
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Abstract
Semiconductor devices with porous insulative materials are disclosed. The porous insulative materials may include a consolidated material with voids dispersed therethrough. The voids may be defined by shells of microcapsules. The voids impart the dielectric materials with reduced dielectric constants and, thus, increased electrical insulation properties.
Claims20
A semiconductor device structure, comprising:
- a substrate comprising a semiconductor material;
- and
- a structure over the substrate, comprising a dielectric material and a plurality of thin-walled structures at least partially surrounded by the dielectric material, with a discernable boundary present at an interface between each thin-walled structure and the dielectric material that contacts the thin-walled structure.
A semiconductor device structure, comprising:
- a substrate comprising a semiconductor material;
- a structure on the substrate comprising a dielectric material and a plurality of thin-walled structures at least partially surrounded by and discernable from the dielectric material;
- and
- at least one conductive element over the substrate.
1 more element
A semiconductor device structure, comprising:
- a substrate comprising a semiconductor material;
- and
- at least one dielectric structure over the substrate, the at least one dielectric structure including at least one void within a dielectric material and defined by a thin-walled structure that forms a discrete boundary with the dielectric material.
Dependencies are inferred from the claim text.