Semiconductor device and manufacturing method thereof

A semiconductor integrated circuit device comprising:

• a first insulating film formed over a semiconductor substrate and having a first wiring trench;
• a first metal wiring formed in the first wiring trench and including copper as a primary component;
• a second insulating film formed over the first metal wiring and over the first insulating film, the second insulating film being comprised of a material including silicon, oxygen and carbon;
• a third insulating film formed over the second insulating film and comprised of a material including silicon and carbon, wherein the material of the second insulating film has a greater barrier property to copper than the material of the third insulating film, and wherein the material of the second insulating film is different from the material of the third insulating film;
• a fourth insulating film formed over the third insulating film and comprised of a material including silicon, oxygen and carbon, the fourth insulating film having a thickness greater than thicknesses of the second and third insulating films, and a dielectric constant lower than a dielectric constant of a silicon oxide film;
• wherein a contact hole is formed in the fourth, third and second insulating films and is connected to the first metal wiring,
• wherein a second wiring trench is formed in the fourth insulating film and is connected to the contact hole, and
• wherein a second metal wiring and a plug including copper as a primary component are formed in the second wiring trench and the contact hole as one combined unit, such that the second metal wiring is connected to the first metal wiring through the plug.

A semiconductor integrated circuit device comprising:

• a first insulating film formed over a semiconductor substrate;
• a first metal wiring embedded in the first insulating film;
• a second insulating film formed over the first metal wiring and over the first insulating film;
• a third insulating film formed over the second insulating film;
• a fourth insulating film formed over the third insulating film and having a thickness greater than thicknesses of the second and third insulating films;
• a plug formed in the fourth, third and second insulating films;
• a second metal wiring embedded in the fourth insulating film and connected to the first metal wiring through the plug;
• and
• wherein the first metal wiring is composed of copper as a primary component,
• wherein the second metal wiring and the plug are one combined unit as a dual damascene structure and are composed of copper as a primary component,
• wherein the second insulating film is composed of a material including silicon, carbon and oxygen,
• wherein the third insulating film is composed of a material including silicon and carbon,
• wherein the fourth insulating film is composed of a material including silicon, oxygen and carbon and has a dielectric constant lower than a dielectric constant of a silicon oxide film,
• wherein the material of the second insulating film has a greater barrier property to copper than the material of the third insulating film, and
• wherein the material of the second insulating film is different from the material of the third insulating film.

A semiconductor integrated circuit device comprising:

• a first insulating film formed over a semiconductor substrate;
• a first metal wiring embedded in the first insulating film;
• a second insulating film formed over the first metal wiring and over the first insulating film;
• a third insulating film formed over the second insulating film;
• a fourth insulating film formed over the third insulating film and having a thickness greater than thicknesses of the second and third insulating films;
• a plug formed in the fourth, third and second insulating films;
• a second metal wiring embedded in the fourth insulating film and connected to the first metal wiring through the plug;
• and
• wherein the first metal wiring is composed of copper as a primary component,
• wherein the second metal wiring and the plug are one combined unit as a dual damascene structure and are composed of copper as a primary component,
• wherein the second insulating film is composed of a material including silicon, carbon and oxygen,
• wherein the third insulating film is composed of a material including silicon and carbon,
• wherein the fourth insulating film is composed of a material including silicon, oxygen and carbon and has a dielectric constant lower than a dielectric constant of a silicon oxide film,
• wherein the material of the second insulating film has a greater barrier property to copper than the material of the third insulating film,
• wherein the material of the third insulating film has a greater adhesiveness to the material of the fourth insulating film than the material of the second insulating film, and
• wherein the material of the second insulating film is different form the material of the third insulating film.