US 2009/0256259 A1Published application

Semiconductor device and method for manufacturing the same

AssigneeKabushiki Kaisha Toshiba

InventorHiroyuki KANAYA

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Abstract

A semiconductor device has a first interlayer insulating film formed on a semiconductor substrate, a first plug and a second plug embedded in holes formed to open the first interlayer insulating film, a capacitor formed on the first interlayer insulating film so as to connect to the first plug, a hydrogen barrier film including an aluminum oxynitride material and formed so as to cover the capacitor, the first interlayer insulating film and the second plug, a second interlayer insulating film formed on the hydrogen barrier film, a third plug embedded in a hole formed so as to open the second interlayer insulating film and the hydrogen barrier film and expose an upper surface of the upper electrode, and a fourth plug embedded in a hole formed so as to open the second interlayer insulating film and the hydrogen barrier film and expose an upper surface of the second plug.

Claims14

Dependent claims

A semiconductor device comprising:

a semiconductor substrate;
a first interlayer insulating film formed on the semiconductor substrate;
a first plug and a second plug embedded in holes in the first interlayer insulating film;
a capacitor comprising a conductive barrier film formed on the first interlayer insulating film, configured to connect to the first plug, and, layered on the barrier film in the following order, a lower electrode, a ferroelectric film and an upper electrode;
a hydrogen barrier film comprising an aluminum oxynitride layer on the capacitor, the first interlayer insulating film and the second plug;
a second interlayer insulating film formed on the hydrogen barrier film;
a third plug embedded in a hole through the second interlayer insulating film and the hydrogen barrier film exposing an upper surface of the upper electrode;
a fourth plug embedded in a hole through the second interlayer insulating film and the hydrogen barrier film exposing an upper surface of the second plug;
and
a wiring layer formed on the second interlayer insulating film and configured to connect to the third plug and the fourth plug.

7 more elements

A manufacturing method for a semiconductor device, comprising:

forming an interlayer insulating film on a semiconductor substrate;
forming a first hole and a second hole in the interlayer insulating film exposing a surface of the semiconductor substrate;
forming a first plug and a second plug by embedding a conducting film in the first hole and the second hole respectively;
forming a capacitor on the interlayer insulating film, configured to connect to the first plug and comprising a conductive barrier film, a lower electrode, a ferroelectric film and an upper electrode configured to form layers in the stated order;
and
forming a hydrogen barrier film on the capacitor, the interlayer insulating film and the second plug, the hydrogen barrier film comprising an aluminum oxynitride material.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/392,052Filed 24 Feb 2009
Priority: JP 2008-10466714 Apr 2008
Published: 15 Oct 2009
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10W 20/074
Of dielectric parts thereof: of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or…
H10B 53/30
Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors: characterised by the memory core region
H10D 1/682
Capacitors having no potential barriers: having dielectrics comprising perovskite structures
H10D 1/696
Electrodes: comprising multiple layers, e.g. comprising a barrier layer and a metal layer