Loading patent…
AssigneeSemi Conductor Devices—An Elbit Systems-Rafael Partnership
InventorPhilip Klipstein
Estimating the term…
A photo-detector with a reduced G-R noise comprises two n-type narrow bandgap layers surrounding a middle barrier layer having an energy bandgap at least equal to the sum of the bandgaps of the two narrow bandgap layers. Under the flat band conditions the conduction band edge of each narrow bandgap layer lies below the conduction band edge of the barrier layer by at least the bandgap energy of the other narrow bandgap layer. When biased with an externally applied voltage, the more negatively biased narrow bandgap layer is the contact layer and the more positively biased narrow bandgap layer is the photon absorbing layer. Under external bias conditions the bands in the photon absorbing layer next to the barrier layer are flat or accumulated, and the flat part of the valence band edge in the photon absorbing layer lies below the flat part of the valence band edge of the contact layer and has an energy of not more than 10kTop above the valence band edge in any part of the barrier layer (k=Boltzman constant and Top=operating temperature).
A photo-detector with a reduced G-R noise, comprising two n-type narrow bandgap layers surrounding a middle larger bandgap n-type barrier layer, wherein under flat band conditions the conduction band edge of each narrow bandgap layer lies above the valence band edge of the barrier layer and also the conduction band edge of each narrow bandgap layer lies below the conduction band edge of the barrier layer by at least half the bandgap energy of the other narrow bandgap layer and, wherein when biased with an eternally applied voltage, the more negatively biased narrow bandgap layer is the contact layer and the more positively biased narrow bandgap layer is the photon absorbing layer, and wherein under external bias conditions the bands in the photon absorbing layer next to the barrier layer are flat or accumulated, and the flat part of the valence band edge in the photon absorbing layer lies below the flat part of the valence band edge of the contact layer and it also lies an energy of not more than 10kTop above the valence band edge in any part of the barrier layer, where k is the Boltzman constant and Top is the operating temperature.
A photo-detector with a reduced G-R noise, comprising two p-type narrow bandgap layers surrounding a middle p-type barrier layer, said middle barrier layer having an energy bandgap greater than the largest bandgap of the two narrow bandgap layers and preferably equal to at least the sum of the bandgaps of the two narrow bandgap layers, wherein under flat band conditions the valence band edge of each narrow bandgap layer lies below the conduction band edge of the barrier layer and also the valence band edge of each narrow bandgap layer lies above the valence band edge of the barrier layer by at least half and preferably all of the bandgap energy of the other narrow bandgap layer, and wherein when biased with an externally applied voltage, the more positively biased narrow bandgap layer is the contact layer and the more negatively biased narrow bandgap layer is the photon absorbing layer, and wherein under external bias conditions the bands next to the barrier layer in the photon absorbing layer are flat or accumulated, and the flat part of the conduction band edge of the photon absorbing layer lies above the flat part of the conduction band edge of the contact layer and it also lies an energy of not more than 10 kTop below the conduction band edge in any part of the barrier layer, where k is the Boltzman constant and Top is the operating temperature.
Dependencies are inferred from the claim text.