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US 2009/0256208 A1Published application
Semiconductor device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorKimitoshi Okano
Life of this patent
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Abstract
A method of fabricating a semiconductor device according to one embodiment includes: forming a fin and a film on a semiconductor substrate, the film being located at least either on the fin or under the fin and on the semiconductor substrate; forming a gate electrode so as to sandwich both side faces of the fin via a gate insulating film; and expanding or shrinking the film, thereby generating a strain in a height direction of the fin in a channel region.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a fin and a film on a semiconductor substrate, the film being located at least either on the fin or under the fin and on the semiconductor substrate;
- forming a gate electrode so as to sandwich both side faces of the fin via a gate insulating film;
- and
- expanding or shrinking the film, thereby generating a strain in a height direction of the fin in a channel region.
1 more element
A method of fabricating a semiconductor device, comprising:
- forming a fin, a pad connected to the fin and a film on a semiconductor substrate, the film being located at least either on or under the fin and the pad;
- expanding or shrinking a portion of the film that is located on an interface with the fin and on a portion of outside of an interface with the pad, thereby generating a strain in a height direction of the fin in the fin;
- and
- forming a gate electrode so as to sandwich both side faces of the fin via gate insulating films.
1 more element
A semiconductor device, comprising:
- a fin formed on a semiconductor substrate and having a strain in a height direction in a channel region therein;
- a gate electrode formed so as to sandwich both side faces of a portion of the fin including the channel region;
- and
- a film formed at least either on or under a portion of the fin including the channel region, the film configured to generate a strain to the portion of the fin.
1 more element
Dependencies are inferred from the claim text.