Method for manufacturing semiconductor device and the semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKatsuyuki SEKINE, Kazuhei YOSHINAGA
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Abstract
A method for manufacturing a semiconductor device which includes: alternately supplying a silicon source and an oxidant to deposit a silicon oxide film on a surface of a semiconductor substrate, wherein the silicon source is supplied under a supply condition where an adsorption amount of molecules of the silicon source on the semiconductor substrate is increased without causing an adsorption saturation of the molecules of the silicon source on the semiconductor substrate, and wherein the oxidant is supplied under a supply condition where impurities remain in the molecules of the silicon source adsorbed on the semiconductor substrate.
Claims20
A method for manufacturing a semiconductor device comprising:
- alternately supplying a silicon source and an oxidant to deposit a silicon oxide film on a surface of a semiconductor substrate,
- wherein the silicon source is supplied under a supply condition where an adsorption amount of molecules of the silicon source on the semiconductor substrate is increased without causing an adsorption saturation of the molecules of the silicon source on the semiconductor substrate, and
- wherein the oxidant is supplied under a supply condition where impurities remain in the molecules of the silicon source adsorbed on the semiconductor substrate.
A method for manufacturing a semiconductor device comprising:
- alternately supplying a silicon source and an oxidant to deposit a silicon oxide film on a surface of a semiconductor substrate,
- wherein the silicon source is supplied under a supply condition where a supply time of the oxidant is set shorter than a supply time of the silicon source in each cycle of an alternate supply of the silicon source and the oxidant.
A semiconductor device comprising;
- at least one of a tunnel insulating film, an inter-poly insulating film, a block insulating film, a side wall insulating film, and a gate insulating film as an insulating film,
- wherein the at least one of the insulating film is formed with a silicon oxide film deposited by alternately supplying a silicon source and an oxidant, an oxygen/silicon composition ratio of the silicon oxide film being 2.00 to 2.05.
Dependencies are inferred from the claim text.