Method of laser annealing semiconductor layer and semiconductor devices produced thereby
AssigneeToshiba Matsushita Display Technology Co., Ltd.
InventorsKian Kiat Lim, Atsushi Nakamura, Kai Pheng Tan, Eng Soon Lim, Pho Ling Fu, Takaaki Kamimura
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Abstract
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
Claims26
A method of laser annealing a non-single-crystalline semiconductor layer, the non-single-crystalline semiconductor layer including a product region, the method comprising:
- forming a nitrogen-doped layer on the non-single-crystalline semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc;
- irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam;
- and
- irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
The method of any one of the preceding claims, wherein the nitrogen-doped layer has a thickness in the range of 1 to 30 nm.
The method of any one of the preceding claims, wherein the nitrogen-doped layer has a nitrogen concentration in the range of 3×1020 to 1×1022 atoms/cc.
The method of any one of the preceding claims, wherein the nitrogen-doped layer is also doped with oxygen and has an oxygen concentration in the range of 3×1021 to 7×1022 atoms/cc.
The method of any one of the preceding claims, wherein the non-single-crystalline semiconductor layer includes a plurality of product regions, each comprising a display region of a display device.
A semiconductor device comprising a laser-annealed semiconductor layer, the laser-annealed semiconductor layer having a nitrogen concentration of at least 3×1020 atoms/cc at a surface thereof.
A semiconductor device comprising a gate electrode, a source electrode, a drain electrode, an insulating layer, and a semiconductor layer, the insulating layer being interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes being electrically connected to the semiconductor layer, the semiconductor layer including a surface having a nitrogen concentration of at least 3×1020 atoms/cc.
A semiconductor device comprising a laser-annealed semiconductor layer, the laser-annealed semiconductor layer having a nitrogen concentration of at least 3×1020 atoms/cc at a surface thereof, and a root mean square (rms) value of grain protrusion height of less than 20 nm.
A semiconductor device comprising:
- a laser-annealed semiconductor layer having a first surface and second surface, and being disposed on a substrate such that the second surface is adjacent to the substrate;
- a gate electrode disposed over the laser-annealed semiconductor layer and adjacent to the first surface;
- a gate insulating layer separating the gate electrode and the first surface;
- and
- source and drain electrodes connected to the laser-annealed semiconductor layer;
- wherein a nitrogen concentration at the first surface of the laser-annealed semiconductor layer is at least 3×1020 atoms/cc.
Dependencies are inferred from the claim text.