Semiconductor light emitting element and method for manufacturing same

A method for manufacturing a semiconductor light emitting element comprising an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, the method comprising the steps of:

• forming an n-side electrode in contact with the n-type semiconductor layer;
• forming a p-side electrode in contact with the p-type semiconductor layer;
• forming an insulating layer covering the n-type semiconductor layer, the p-type semiconductor layer, the n-side electrode and the p-side electrode;
• and
• etching the insulating layer to expose part of the n-side electrode and part of the p-side electrode;
• wherein the formation of the n-side electrode is performed by forming a first layer of Al on the n-type semiconductor layer and forming a second layer of any one of Ni, W, Zr and Pt on the first layer, whereas the formation of the p-side electrode is performed by forming a first layer of Au on the p-type semiconductor layer and forming a second layer of any one of Ni, W, Zr and Pt on the first layer.