Thin film transistor matrix device and method for fabricating the same

A thin film transistor matrix device comprising:

• a transparent insulating substrate;
• a plurality of thin film transistors arranged on the transparent insulating substrate in a matrix;
• a plurality of picture element electrodes arranged on the transparent insulating substrate in a matrix and connected to the sources of the thin film transistors;
• a plurality of gate bus lines for commonly connecting the gates of the thin film transistors;
• a plurality of drain bus lines for commonly connecting the drains of the thin film transistors;
• first outside terminals formed on a margin of the transparent insulating substrate and opposed to the ends of the gate bus lines;
• second outside terminals formed on a margin of the transparent insulating substrate and opposed to the ends of the drain bus lines;
• and
• gate connection lines formed in an inner region of the second outside terminals and commonly connecting said plurality of drain bus lines.

A method for fabricating a thin film transistor matrix device comprising:

• a first step of forming on a transparent insulating substrate a plurality of gate bus lines for commonly connecting the gates of thin film transistors, first outside terminals opposed to ends of the gate bus lines, and a gate connection line formed in a region inner of the first outside terminals for commonly connecting said plurality of gate bus lines;
• a second step of forming a first insulating film on the entire surface;
• and
• a third step of forming on the first insulating film a plurality of drain bus lines for commonly connecting the drains of the thin film transistors, second outside terminals opposed to the ends of the drain bus lines, and a drain connection line formed in a region inner of the second outside terminals for commonly connecting said plurality of drain bus lines.