Display substrate and method of manufacturing the same

A display substrate comprising:

• a substrate;
• a gate electrode arranged on the substrate;
• an insulating layer arranged on the substrate over the gate electrode;
• a source electrode arranged on the insulating layer;
• a drain electrode arranged on the insulating layer and spaced from the source electrode;
• and
• a semiconductor layer arranged on the source electrode and the drain electrode,
• wherein the semiconductor layer comprises:
• a first ohmic contact region that overlays an upper surface and a side surface of the source electrode;
• a second ohmic contact region that overlays an upper surface and a side surface of the drain electrode;
• and
• a channel region that is spaced from the source and drain electrodes and interconnects the first ohmic contact region and the second ohmic contact region.

A method of manufacturing a display substrate, the method comprising:

• forming, on a substrate, a source electrode and a drain electrode spaced from the source electrode;
• depositing a semiconductor material on the substrate, the source electrode and the drain electrode to form a semiconductor layer including a first ohmic contact region that overlays an upper surface and a side surface of the source electrode, a second ohmic contact region that overlays an upper surface and a side surface of the drain electrode, and a channel region that is spaced from the source and drain electrodes and overlays the substrate's portion between the first ohmic contact region and the second ohmic contact region;
• forming an insulating layer on the semiconductor layer;
• forming a gate electrode on the insulating layer;
• and
• forming a protective layer on the gate electrode and the insulating layer.

A method of manufacturing a display substrate, the method comprising:

• forming a gate electrode on a substrate;
• forming an insulating layer on the substrate over the gate electrode;
• forming, on the insulating layer, a source electrode and a drain electrode spaced from the source electrode;
• forming a semiconductor layer on the insulating layer, the source electrode and the drain electrode, the semiconductor layer including a first ohmic contact region that overlays an upper surface and a side surface of the source electrode, a second ohmic contact region that overlays an upper surface and a side surface of the drain electrode, and a channel region that is spaced from the source and drain electrodes and overlays the substrate's portion between the first ohmic contact region and the second ohmic contact region;
• and
• forming a protective layer on the semiconductor layer.