Semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same
AssigneeKoninklijke Philips Electronic, N.V.
InventorBartlomiej J. Pawlak
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Abstract
Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) providing an insulating layer on a top surface of the semiconductor substrate, c) making an amorphous layer in a top layer of said semiconductor substrate by a suitable implant, d) implanting a dopant into said semiconductor substrate through said insulating layer to provide said amorphous layer with a predetermined doping profile, said implant being performed such that said doping profile has a peak value located within said insulating layer, e) applying a solid phase epitaxial regrowth action to regrow said amorphous layer and activate said dopant.
Claims10
Method of producing a semiconductor device comprising:
- a) providing a semiconductor substrate,
- b) providing an insulating layer on a top surface of the semiconductor substrate,
- c) making an amorphous layer in a top layer of said semiconductor substrate by a suitable implant,
- d) implanting a dopant into said semiconductor substrate through said insulating layer to provide said amorphous layer with a predetermined doping profile,
- e) applying a solid phase epitaxial regrowth action to regrow said amorphous layer and activate said dopant, wherein in action d), said implant is performed such that said doping profile has a peak value located within said insulating layer.
Semiconductor device made by a solid phase epitaxial regrowth technique, comprising a top layer at a surface of a semiconductor substrate with a conductivity profile having a peak conductivity value located substantially at said surface.
Dependencies are inferred from the claim text.