Organic thin film transistor and method for manufacturing same
AssigneeKonica Minolta Holdings, Inc.
InventorKatsura Hirai
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Abstract
Disclosed are an organic thin film transistor exhibiting a high switching current value even when a distance (channel length) between source and the drain electrodes is large, and a manufacturing method thereof. The organic thin film transistor of the invention comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, a drain electrode and at least one different type electrodes characterized in that the different type electrode is formed in a channel region between the source electrode and the drain electrode on the organic semiconductor layer.
Claims12
An organic thin film transistor comprising a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, a drain electrode and at least one different type electrode, wherein the different type electrode is provided on the organic semiconductor layer and in a channel region between the source electrode and the drain electrode.
A method for manufacturing an organic thin film transistor comprising a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, a drain electrode and at least one different type electrode, the method comprising the step of forming the different type electrode on the organic semiconductor layer and in a channel region between the source electrode and the drain electrode.
Dependencies are inferred from the claim text.