Organic thin film transistor
AssigneeXerox Corporation
InventorsYiliang Wu, Hualong Pan, Ping Liu, Yuning Li
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Abstract
Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.
Claims23
A thin film transistor comprising a dielectric layer, an interfacial layer, and a semiconducting layer;
- wherein the interfacial layer is between the dielectric layer and the semiconducting layer;
- wherein the interfacial layer is formed from a silane;
- and
- wherein the semiconducting layer comprises a semiconductor of Formula (I):
- wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl;
- and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl.
A thin-film transistor, comprising:
- a gate electrode, a source electrode, a drain electrode, a dielectric layer, an interfacial layer, and a semiconducting layer;
- wherein the interfacial layer is located between the dielectric layer and the semiconducting layer;
- wherein the dielectric layer is located between the gate electrode and the semiconducting layer;
- wherein the interfacial layer is formed from a silane of the formula C12H25SiX3, where X is selected from Cl, OCH3, and mixtures thereof;
- and
- wherein the semiconducting layer comprises a semiconductor of Formula (I):
- wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl;
- and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl.
A process for forming an interfacial layer between a gate dielectric layer and a semiconductor layer of a thin film transistor comprising:
- providing a hydrophilic surface on the gate dielectric layer;
- providing a silane solution;
- aging the silane solution at a relative humidity of from about 30% to 80% at a temperature of from about 25° C. to about 80° C. for from about 10 minutes to about 60 minutes;
- and
- coating the hydrophilic surface with the aged silane solution to form the interfacial layer.
Dependencies are inferred from the claim text.